2N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead(Pb)-Free 2 AMPERES DRAIN SOURCE VOLTAGE 600 VOLTAGE Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D-PAK3/(TO-251) 2 DRAIN Features: * * * * * D-PAK/(TO-252) 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V Low gate charge 1 GATE Low Crss Fast switching Improved dv/dt capability Maximum Ratings(T A 3 TO-220 SOURCE TO-220F =25 C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 Avalanche Current - (Note 1) I AR 2.0 Continuous Drain Current ID 2.0 Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 8.0 Avalanche Energy, Single Pulsed (Note 2) E AS 140 mJ Avalanche Energy, Repetitive, Limited by TJMAX E AR 4.5 mJ dv/dt 4.5 V/ns PD 44 23 34 0.35 0.18 0.27 W TL 300 ˚C TJ,Tstg -55~+150 ˚C Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation 2N60P(TC=25˚C) 2N60F(T C=25˚C) 2N60I/D(TC=25˚C) 2N60P(Derate above 25°C) 2N60F(Derate above 25°C) 2N60I/D(Derate above 25°C) Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Operating Junction and Storage Temperature Range Unit V A * Drain current limited by maximum junction temperature. WEITRON http:www.weitron.com.tw 1/9 12-Apr-2011 2N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS 600 - - VGS(Th) 2.0 - 4.0 IGSS - - 100 -100 - - 10 - - 100 RDS(on) - 4.0 5.0 Ω gfs - 2.25 - S ∆BV DSS /∆TJ - 0.4 - V/˚C Ciss - 320 380 Coss - 30 45 Crss - 3 5.6 Turn-on Delay Time VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5) td(on) - 13 30 Turn-on Rise Time VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5) tr - 12 60 Turn-off Delay Time VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5) td(off) - 73 100 Turn-off Fall Time VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5) tf - 14.3 70 Total Gate Charge VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qg - 9.3 13 Gate-Source Charge VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qgs - 2.0 - Gate-Drain Change VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Qgd - 3.3 - Static Drain-Source Breakdown Voltage Gate Threshold Voltage @V GS=0,ID=250μA @V DS=VGS,ID=250μA Gate-Source Leakage current Forward@V GS=30V,V DS=0V ReVerse@V GS=-30V,VDS=0V Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0 Drain-SourceLeakage Current(Tj=125˚C) @VDS=480V,VGS=0 Drain-Source On-State Resistance @VGS=10V,I D=1.0A Forward Transconductance @VDS=50V,I D=1.0A(Note 4) Breakdown Voltage Temperature Coefficient I D =250 µA, Referenced to 25°C IDSS V nA μA Dynamic Input Capacitance Output Capacitance @VGS=0V,VDS=25V,f=1.0MHz @VGS=0V,VDS=25V,f=1.0MHz Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz pF Switching WEITRON http:www.weitron.com.tw ns 2/9 nC 12-Apr-2011 2N60 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max Unit VSD - - 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS - - 2.0 A Maximum Pulsed Drain-Source Diode Forward Current I SM - - 8.0 A Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4) T rr - 230 - ns Reverse Recovery Charge @VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4) Q rr - 1.0 - µC Source-Drain Diode Characteristics Drain-Source Diode Forward Voltage @VGS=0V,IS=7.5A Thermal Data Characteristic Junction-to-Ambient Junction-to-Case 2N60P 2N60F 2N60I 2N60D 2N60P 2N60F 2N60I 2N60D Symbol Value Unit RJA 62.5 120 112 112 °C/W RJC 2.26 5.56 3.7 3.7 °C/W Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 30mH, IAS = 2.58A, VDD = 123V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Ordering Information Order Number Pin Assignment Packing Package 1 2 3 2N60P TO-220 G D S Tube 2N60F TO-220F G D S Tube 2N60I D-PAK3/TO-251 G D S Tube D-PAK/TO-252 G D S Tube 2N60D WEITRON http:www.weitron.com.tw 3/9 12-Apr-2011 2N60 Test Circuits And Waveforms + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms WEITRON http://www.weitron.com.tw 4/9 12-Apr-2011 2N60 Test Circuits And Waveforms(cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2 μF Fig. 2B Switching Waveforms QG 10V 0.3 μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp IAS tp Fig. 4A Unclamped Inductive Switching Test Circuit WEITRON http://www.weitron.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5/9 12-Apr-2011 2N60 Typical Characteristics Transfer Characteristics On-Region Characteristics V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm : 5.5V VDS=50V 250 μs Pulse Test Drain Current, I D (A) 100 10 -1 10 -2 Drain Current, ID (A) Top: 250μs Pulse Test TC=25°C 10 -1 10 85 °C 0 10 -20 °C -1 10 2 1 0 25 °C 10 4 Drain-Source Voltage, VDS (V) VGS=10V VGS=20V 8 6 4 2 3 2 1 4 5 10 0 125 °C 6 0.2 Drain Current, ID (A) Ciss 200 Crss VGS=0V f = 1MHz -1 100 10 WEITRON http://www.weitron.com.tw 10 1.2 1.4 1.6 (V) VDS=300V VDS=480V 8 6 4 2 ID=2.4A 0 101 Drain-Source Voltage, V 1.0 VDS=120V C oss 0 0.8 12 Ciss=C GS+CGD (CDS=shorted) Coss=C DS+CGD Crss=CGD 300 100 0.6 Gate Charge vs. Gate Charge Voltage Gate-Source Voltage, VGS (V) Capacitance (pF) 400 0.4 Source-Drain Voltage, VSD (V) Capacitance vs. Drain-Source Voltage 500 25°C 10-1 0 0 10 VGS=0V 250 μs Pulse Test TJ=25 °C 10 8 Bo dy Dio de Fo rwa rd Vo ltag e Va riati onvs. Source Current and Temperature Reverse Drain Current, IDR (A) Drain-Source On-Resistance, R DS(ON) ( Ω ) On-Resistance Variation vs. Drain Current and Gate Voltage 12 6 Gate-Source Voltage, VGS (V) 0 2 4 6 8 1 0 Total Gate Charge, Q (nC) 6/9 12-Apr-2011 2N60 Typical Characteristics 1.2 On -Resistance vs. Temperature VGS=10V ID=250ӴA Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, VDSS (Normalized) Breakdown Voltage vs. Temperature 1.1 1.0 0.9 0.8 -100 -50 50 0 100 2.0 1.5 1.0 0.5 0.0 -100 -50 200 150 3.0 V =10V GS ID=4.05A 2.5 Junction Temperature, TJ (ć) 10 1 Drain Current, ID (A) Drain Current, ID (A) 100 200 150 2.0 Operation in This Area is Limited by RDS(on) 100Ӵs 10Ӵs 1ms 10m Ds C 100 10 -2 50 Max. Drain Current vs. Case Temperature Max. Safe Operating Area 10 -1 0 Junction Temperature, T J (ć) TC=25ć TJ=125ć Single Pulse 1.5 1.0 0.5 0.0 100 101 102 103 25 50 75 100 125 150 Case Temperature, TC (ć) Drain-Source Voltage, VDS (V) Thermal Response, ӰJC (t) Thermal Response 10 0 D=0.5 /W Max. JC (t) = 2.78 Duty Factor, D=t1/t2 TJM -TC=PDM× JC (t) 0.2 0.1 0.05 -1 10 0.02 PDM 0.01 t1 Single pulse t2 -5 -4 10 10 -3 10 -2 10 10 -1 0 10 1 10 Square Wave Pulse Duration, t1 (s) WEITRON http://www.weitron.com.tw 7/9 12-Apr-2011 2N60 TO-220 Outline Dimensions Unit:mm TO-220 A D C1 Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Ø F H E1 E B1 L1 A1 L B G C G1 Φ M in M ax 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73 TO-220F Outline Dimensions Unit:mm TO-220F Symbol Dimension 1 A 3.3±0.15 B 2.55±0.20 C 4.72±0.2 D 1.47MAX L 15.75±0.30 WEITRON http://www.weitron.com.tw 8/9 Dimension 2 2.70±0.75 3.0±0.20 4.5±0.20 1.75MAX 15±0.30 12-Apr-2011 2N60 TO-251 Outline Dimensions unit:mm TO-251 E A G 4 H B 1 2 Dim A B C D E G H J K L M N J 3 M N K D C L M in 6 .4 0 6 .8 0 0 .5 0 2 .2 0 0 .4 5 1 .0 0 5 .4 0 0 .4 5 0 .9 0 6 .5 0 - M ax 6 .8 0 7 .2 0 0 .8 0 2 .3 0 2 .5 0 0 .5 5 1 .6 0 5 .8 0 0 .6 9 1 .5 0 0 .9 0 1 . Em it t er 2 . Base 3 . Collect or TO-252 Outline Dimensions unit:mm E TO-252 A G 4 H Dim A B C D E G H J K L M J 1 2 3 B M K D C WEITRON http://www.weitron.com.tw L 9/9 Min 6.40 9.00 0.50 2.20 0.45 1.00 5.40 0.30 0.70 0.90 Max 6.80 10.00 0.80 2.30 2.50 0.55 1.60 5.80 0.64 1.70 1.50 12-Apr-2011