SEMICONDUCTOR KP11N60D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A C K D L B FEATURES ・VDSS=600V, ID=11A H ・Drain-Source ON Resistance : J E N G RDS(ON)(Max)=0.38Ω @VGS=10V F F M ・Qg(typ.)= 20nC MAXIMUM RATING (Tc=25℃) CHARACTERISTIC 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V @TC=25℃ Drain Current 6.9* O DPAK (1) A 24* EAS 195 mJ EAR 4.0 mJ dv/dt 4.5 V/ns 69.4 W 0.56 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 1.8 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 110 ℃/W Drain Power Dissipation 1. GATE 2. DRAIN 3. SOURCE ID IDP Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 3 11* @TC=100℃ Pulsed (Note1) 2 DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2013. 5. 15 Revision No : 0 1/6 KP11N60D ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250μA, Referenced to 25℃ - 0.6 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=5.5A - 0.33 0.38 Ω - 20 - - 4.0 - - 9.0 - - 25 - - 35 - - 65 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=480V, ID=11A VGS=10V (Note 5) VDD=300V ID=11A td(off) Turn-off Delay time RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 25 - Input Capacitance Ciss - 850 - Output Capacitance Coss - 800 - Reverse Transfer Capacitance Crss - 2.0 - - - 11 - - 44 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=11A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=11A, VGS=0V, - 300 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 3.0 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =3mH, IS=11A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤11A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 10㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KP11N60 001 D 2 1 PRODUCT NAME 2 LOT NO 2013. 5. 15 Revision No : 0 2/6 KP11N60D Fig1. ID - VDS Fig2. ID - VGS VDS=20V VGS=10V VGS=6V 10 VGS=5V 1 Drain Current ID (A) Drain Current ID (A) 100 10 1 100 C 10 25 C 0 -1 0.1 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) 1.2 VGS = 0V IDS = 250 On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 1.3 1.2 1.1 1.0 0.9 0 25 50 75 100 125 VGS=5V 1.0 0.8 0.6 0.4 VGS=10V 0.2 0 0 150 5 2 3.0 Normalized On Resistance 25 C 1 10 0 10 -1 0.4 0.6 0.8 1.0 15 20 Fig6. RDS(ON) - Tj 10 100 C 10 Drain Current ID (A) Fig5. IS - VSD Reverse Drain Current IS (A) 10 Fig4. RDS(ON) - ID Junction Temperature Tj ( C ) 1.2 Source - Drain Voltage VSD (V) 2013. 5. 15 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 10 6 Revision No : 0 1.4 1.8 2.5 VGS =10V IDS = 5.5A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/6 KP11N60D Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) Capacitance (pF) 104 Ciss 103 Coss 102 101 Crss 1 0 10 20 30 ID=11A 10 8 VDS = 480V 6 4 2 0 0 40 4 8 12 16 20 24 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Safe Operation Area Drain Current ID (A) 102 101 10ט 100ט 1י 100 Operation in this area is limited by RDS(ON) 10י 10-1 DC 10-2 100 101 102 103 Drain - Source Voltage VDS (V) Fig10. Transient Thermal Response Curve Transient Thermal Resistance 101 100 Duty=0.5 0.1 PDM 0.2 10-1 0.05 t1 0.02 0.01 t2 - Rth(j-c) = 1.8 C/W Max. - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2013. 5. 15 Revision No : 0 4/6 KP11N60D Fig11. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig13. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% td(off) 25 Ω VDS td(on) ton 10V 2013. 5. 15 tr tf toff VGS Revision No : 0 5/6 KP11N60D Fig14. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.5 Body Diode Reverse Current VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2013. 5. 15 VGS Revision No : 0 Body Diode Forword Voltage drop 6/6