SEMICONDUCTOR KF7N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF7N65P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B FEATURES C I D E ・VDSS=650V, ID=7A K P ・Drain-Source ON Resistance : M F G L RDS(ON)(Max)=1.2Ω @VGS=10V H J ・Qg(typ.)= 24nC I D J N H N MAXIMUM RATING (Tc=25℃) SYMBOL VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Power Dissipation Tc=25℃ 4.2 4.2* 18 18* P 1. GATE 2. DRAIN 3. SOURCE Q TO-220AB A KF7N65F C A 212 mJ EAR 1.6 mJ O F EAS dv/dt PD Derate above 25℃ 4.5 E V/ns 160 52 W 1.28 0.42 W/℃ Tj 150 ℃ Tstg -55～150 ℃ L M R J Maximum Junction Temperature 7* 3 B Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP 7 2 G Pulsed (Note1) ID 1 KF7N65F Drain-Source Voltage @TC=100℃ Storage Temperature Range _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + O UNIT KF7N65P @TC=25℃ 1.46 L N K CHARACTERISTIC K M RATING Drain Current 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q D Thermal Characteristics N RthJC 0.78 2.4 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 ℃/W Q Thermal Resistance, Junction-to-Case * : Drain current limited by maximum junction temperature. 1 N 2 H 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + TO-220IS (1) PIN CONNECTION D G S 2011. 1. 25 Revision No : 0 1/7 KF7N65P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 650 - - V ID=250μA, Referenced to 25℃ - 0.65 - V/℃ Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=3.5A - 1.0 1.2 Ω - 24 - - 5.4 - - 9.5 - - 30 - - 30 - - 50 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=520V, ID=7.0A VGS=10V (Note4,5) VDD=325V ID=7.0A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 25 - Input Capacitance Ciss - 1010 - Output Capacitance Coss - 111 - Reverse Transfer Capacitance Crss - 7.0 - - - 7 - - 28 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=7.0A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=7.0A, VGS=0V, - 350 - ns Reverse Recovery Charge Qrr dIs/dt=100A/μs - 3.6 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =8.1mH, IS=7.0A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤7.0A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF7N65 701 P 2011. 1. 25 2 KF7N65 713 F 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/7 KF7N65P/F Fig1. ID - VDS Fig2. ID - VGS VDS=20V VGS=10V, 7V Drain Current ID (A) Drain Current ID (A) 100 10 1 VGS=5V 10 1 10 -1 0.1 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 1.0 0.9 0 -50 100 50 2.5 2.0 VGS=7V 1.5 VGS=10V 1.0 0.5 0 0 150 3 6 Junction Temperature Tj ( C ) 10 10 Normalized On Resistance Reverse Drain Current IS (A) 1 150 C 25 C -1 0.4 0.6 0.8 1.0 Source - Drain Voltage VSD (V) 2011. 1. 25 12 15 18 Fig6. RDS(ON) - Tj 3.0 0 9 Drain Current ID (A) Fig5. IS - VSD 0.2 10 3.0 1.1 10 8 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 6 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 25 C 100 C 0 Revision No : 0 1.2 1.4 2.5 VGS =10V IDS = 3.75A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/7 KF7N65P/F Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) Capacitance (pF) 104 Ciss 103 Coss 102 Crss 101 100 0 10 20 30 ID=7A VDS = 520V 10 VDS = 325V 8 VDS = 130V 6 4 2 0 4 0 40 (KF7N65P) 20 28 24 32 (KF7N65F) 102 Operation in this area is limited by RDS(ON) Operation in this area is limited by RDS(ON) 10µs Drain Current ID (A) Drain Current ID (A) 16 Fig10. Safe Operation Area Fig9. Safe Operation Area 100µs 101 1ms 10ms 100 DC Tc= 25 C Tj = 150 C 10-1 Single nonrepetitive pulse 100 12 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 102 8 10µs 100µs 101 1ms 10ms 100 DC Tc= 25 C Tj = 150 C -1 10 Single nonrepetitive pulse 102 101 103 Drain - Source Voltage VDS (V) 100 101 102 103 Drain - Source Voltage VDS (V) Fig11. ID - Tj Drain Current ID (A) 8 6 4 2 0 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2011. 1. 25 Revision No : 0 4/7 KF7N65P/F Transient Thermal Resistance Fig12. Transient Thermal Response Curve (KF7N65P) 100 Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) Normalized Transient Thermal Resistance Fig13. Transient Thermal Response Curve (KF7N65F) 101 Duty=0.5 100 0.2 PDM 0.1 t1 0.05 10-1 0.02 0.01 t2 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2011. 1. 25 Revision No : 0 5/7 KF7N65P/F 2011. 1. 25 Revision No : 0 6/7 KF7N65P/F 2011. 1. 25 Revision No : 0 7/7