SEMICONDUCTOR
KHB4D0N65P/F
TECHNICAL DATA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KHB4D0N65P
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switch mode power
supplies.
O
C
F
E
G
B
Q
I
FEATURES
K
P
VDSS=650V, ID=4A
M
L
Drain-Source ON Resistance
: RDS(ON)=3.0
J
@VGS = 10V
D
N
Qg(typ.)=20nC
1
MAXIMUM RATING (Tc=25
H
N
2
3
DIM MILLIMETERS
_ 0.2
9.9 +
A
15.95 MAX
B
1.3+0.1/-0.05
C
_ 0.1
D
0.8 +
_ 0.2
E
3.6 +
_ 0.1
F
2.8 +
3.7
G
H
0.5+0.1/-0.05
1.5
I
_ 0.3
13.08 +
J
K
1.46
_ 0.1
1.4 +
L
_ 0.1
1.27+
M
_ 0.2
2.54 +
N
_ 0.2
4.5 +
O
_ 0.2
2.4 +
P
_ 0.2
9.2 +
Q
1. GATE
2. DRAIN
3. SOURCE
)
RATING
CHARACTERISTIC
SYMBOL
TO-220AB
UNIT
KHB4D0N65P KHB4D0N65F
VDSS
650
V
Gate-Source Voltage
VGSS
30
V
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
4.0*
IDP
16
16*
260
mJ
EAR
10.6
mJ
dv/dt
4.5
V/ns
O
L
Derate above25
Storage Temperature Range
E
EAS
PD
Maximum Junction Temperature
A
B
(Note1)
4.0
G
Pulsed
ID
106
36
0.85
0.29
Tj
150
Tstg
-55 150
W/
R
D
N
Q
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
1.18
3.47
/W
Thermal Resistance, Junction-toAmbient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.
M
W
J
@TC=25
C
A
K
Drain Current
KHB4D0N65F
F
Drain-Source Voltage
1
N
2
H
3
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_ 0.2
10.16 +
_ 0.2
15.87 +
_ 0.2
2.54 +
_ 0.1
0.8 +
_ 0.1
3.18 +
_ 0.1
3.3 +
_ 0.2
12.57 +
_ 0.1
0.5 +
13.0 MAX
_ 0.1
3.23 +
1.47 MAX
1.47 MAX
_ 0.2
2.54 +
_ 0.2
6.68 +
_ 0.2
4.7 +
_ 0.2
2.76 +
TO-220IS (1)
D
G
S
2007. 3. 26
Revision No : 1
1/7
KHB4D0N65P/F
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
650
-
-
V
-
0.95
-
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
BVDSS/ Tj
ID=250 A, VGS=0V
ID=250 A, Referenced to 25
V/
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
2.0
-
4.0
V
Drain Cut-off Current
IDSS
VDS=650V, VGS=0V,
-
-
10
A
Gate Leakage Current
IGSS
VGS= 30V, VDS=0V
-
-
100
RDS(ON)
VGS=10V, ID=2.0A
-
2.4
3.0
gFS
VDS=50V, ID=2.0A
-
3.8
-
-
20
25
-
4.0
-
Drain-Source ON Resistance
Forward Transconductance
(Note4)
nA
S
Dynamic
Qg
Total Gate Charge
VDS=520V, ID=4.0A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
7.5
-
Turn-on Delay time
td(on)
-
29.5
69
-
63.4
136.7
-
63.2
136.4
tr
Turn-on Rise time
(Note4, 5)
VDD=325V, RG=25
td(off)
Turn-off Delay time
VGS=10V
ID=4.0A
(Note4, 5)
ns
Turn-off Fall time
tf
-
30
70
Input Capacitance
Ciss
-
645
838
Output Capacitance
Coss
-
60
78
Reverse Transfer Capacitance
Crss
-
7.4
9.6
-
-
4.0
-
-
16
VDS=25V, VGS=0V, f=1.0MHz
nC
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
Pulsed Source Current
ISP
Diode Forward Voltage
VSD
IS=4.0A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=4.0A, VGS=0V,
-
350
-
ns
Reverse Recovery Charge
Qrr
dIs/dt=100A/ s
-
2.7
-
C
VGS<Vth
A
(Note 4)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =30mH, IS=4A, VDD=50V, RG=25 , Starting Tj=25
Note 3) IS
4.0A, dI/dt
200A/
Note 4) Pulse Test : Pulse width
.
, VDD BVDSS, Starting Tj=25 .
300
, Duty Cycle
2%.
Note 5) Essentially independent of operating temperature.
2007. 3. 26
Revision No : 1
2/7
KHB4D0N65P/F
ID - VDS
ID - VGS
1
1
10
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom:
5.5V
0
Drain Current ID (A)
Drain Current ID (A)
10
10
-1
VDS = 50V
250µs Pulse Test
0
10
150 C
25 C
-55 C
10
-1
-1
10
0
10
1
10
2
4
RDS(ON) - ID
6
1.1
1.0
0.9
0.8
-100
5
VGS = 10V
4
3
VGS = 20V
2
1
0
0
-50
100
50
150
0
2
6
Junction Temperature Tj ( C )
1
3.0
Normalized On Resistance
Reverse Drain Current IS (A)
0
10
25 C
VGS = 0V
250µs Pulse Test
-1
0.4
0.6
0.8
1.0
8
10
100
150
RDS(ON) - Tj
10
150 C
4
Drain Current ID (A)
IS - VSD
1.2
1.4
Source - Drain Voltage VSD (V)
2007. 3. 26
10
BVDSS - Tj
VGS = 0V
IDS = 250µA
0.2
8
Gate - Source Voltage VGS (V)
1.2
10
6
Drain - Source Voltage VDS (V)
On - Resistance RDS(ON) (Ω)
Normalized Breakdown Voltage BVDSS
10
Revision No : 1
1.6
1.8
2.5
VGS = 10V
ID = 2.0A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
Junction Temperture Tj ( C)
3/7
KHB4D0N65P/F
Qg- VGS
C - VDS
3
Capacitance (pF)
10
Ciss
Coss
101
Crss
10-1
10-1
100
101
Gate - Source Voltage VGS (V)
12
VDS = 130V
10
VDS = 325V
8
VDS = 520V
6
4
2
0
102
ID = 4.0A
0
5
10
15
Drain - Source Voltage VDS (V)
Gate - Charge Qg (nC)
Safe Operation Area
Safe Operation Area
(KHB4D0N651)
(KHB4D0N65P)
Operation in this area
is limited by RDS(ON)
101
Drain Current ID (A)
Drain Current ID (A)
Operation in this area
is limited by RDS(ON)
100µs
1ms
10ms
DC
100
10-1
100
20
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
101
100µs
1ms
10ms
100ms
DC
100
10-1
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
101
102
103
Drain - Source Voltage VDS (V)
10-2 0
10
101
102
103
Drain - Source Voltage VDS (V)
ID - Tj
Drain Current ID (A)
4
3
2
1
0
25
50
75
100
125
150
Junction Temperature Tj ( C)
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Revision No : 1
4/7
KHB4D0N65P/F
Rth
Transient Thermal Resistance [ C / W]
{KHB4D0N65P1}
100
Duty=0.5
0.2
10-1
PDM
0.1
t1
0.05
t2
0.02
- Duty Factor, D= t1/t2
lse
1
0.0
le
ing
Pu
S
- RthJC =
10-2
10-5
10-4
10-3
10-2
10-1
Tj(max) - Tc
PD
100
101
Square Wave Pulse Duration (sec)
Rth
Transient Thermal Resistance [ C / W]
{KHB4D0N65F}
Duty=0.5
100
0.2
0.1
10-1
PDM
0.05
t1
0.02
t2
0.01
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
lse
le
ing
Pu
S
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
2007. 3. 26
Revision No : 1
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KHB4D0N65P/F
- Gate Charge
VGS
10 V
Fast
Recovery
Diode
ID
ID
0.8 VDSS
1.0 mA
VDS
Q
Qgs
Qgd
VGS
Qg
- Single Pulsed Avalanche Energy
EAS=
1
LIAS2
2
BVDSS
BVDSS - VDD
BVDSS
IAS
L
0.5 VDSS
ID(t)
25Ω
VDS
VDD
10 V
VDS(t)
VGS
Time
tp
2007. 3. 26
Revision No : 1
6/7
KHB4D0N65P/F
- Resistive Load Switching
VDS
90%
RL
0.5 VDSS
25 Ω
10V
VDS
VGS 10%
tf
td(on)
VGS
tr
td(off)
toff
ton
- Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
VDS
ISD
(DUT)
di/dt
IF
IRM
Body Diode Reverse Current
IS
0.8 x VDSS
driver
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
10V
VDD
VGS
Body Diode Forword Voltage drop
2007. 3. 26
Revision No : 1
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