SEMICONDUCTOR KF8N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF8N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. A O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B FEATURES C I D E VDSS=600V, ID=8A K P Drain-Source ON Resistance : RDS(ON)(Max)=1.05 M F G L @VGS=10V H J Qg(typ.)= 24nC I D J N MAXIMUM RATING (Tc=25 H N ) SYMBOL VDSS 600 V Gate-Source Voltage VGSS 30 V ID @TC=100 Drain Power Dissipation Tc=25 8* 5 5* 20 20* 3 P 1. GATE 2. DRAIN 3. SOURCE Q TO-220AB A KF8N60F C A 230 mJ EAR 14.7 mJ O F EAS dv/dt PD Derate above 25 4.5 50 1.23 0.4 150 Tstg -55 150 B V/ns 154 Tj E W W/ L M R J Maximum Junction Temperature 8 2 G Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP 1 KF8N60F Drain-Source Voltage Pulsed (Note1) Storage Temperature Range _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + O UNIT KF8N60P @TC=25 1.46 L N K CHARACTERISTIC K M RATING Drain Current 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q D Thermal Characteristics N RthJC 0.81 2.5 /W Thermal Resistance, Junction-to-Ambient RthJA 62.5 62.5 /W Q Thermal Resistance, Junction-to-Case * : Drain current limited by maximum junction temperature. 1 N 2 H 3 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + TO-220IS (1) PIN CONNECTION D G S 2008. 10. 2 Revision No : 1 1/7 KF8N60P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250 A, Referenced to 25 - 0.65 - Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, VGS=0V V/ Drain Cut-off Current IDSS VDS=600V, VGS=0V - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA VGS=10V, ID=4A - 0.85 1.05 - 24 - - 5.4 - - 10 - - 27 - - 32 - - 72 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) td(off) Turn-off Delay time VGS=10V (Note4,5) VDD=300V tr Turn-on Rise time VDS=480V, ID=8A RL=37.5 RG=25 nC ns (Note4,5) Turn-off Fall time tf - 30 - Input Capacitance Ciss - 865 - Output Capacitance Coss - 111 - Reverse Transfer Capacitance Crss - 14 - - - 8 - - 32 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=8.0A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=8.0A, VGS=0V, - 370 - ns Reverse Recovery Charge Qrr dIs/dt=100A/ s - 3.9 - C VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =6.6mH, IS=8A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 8.0A, dI/dt 200A/ Note 4) Pulse Test : Pulse width , VDD 300 BVDSS, Starting Tj=25 , Duty Cycle . 2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF8N60 801 P 2008. 10. 2 2 KF8N60 813 F Revision No : 1 2 1 PRODUCT NAME 2 LOT NO 2/7 KF8N60P/F Fig1. ID - VDS Fig2. ID - VGS VDS=20V VGS=10V 10 Drain Current ID (A) Drain Current ID (A) 100 VGS=6V VGS=5V 1 10 1 25 C 10 0 100 C -1 0.1 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 1.2 1.1 1.0 0.9 -50 0 50 100 1.1 1.0 VGS=6V 0.9 VGS=10V 0.8 0.7 0.6 0 150 2 4 Junction Temperature Tj ( C ) 3.0 2 Normalized On Resistance Reverse Drain Current IS (A) 1 10 25 C 0 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 2008. 10. 2 Revision No : 1 8 10 12 Fig6. RDS(ON) - Tj 10 100 C 6 Drain Current ID (A) Fig5. IS - VSD 10 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 1.6 1.8 2.5 VGS =10V IDS = 4A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/7 KF8N60P/F Fig 7. C - VDS Fig8. Qg- VGS 12 Gate - Source Voltage VGS (V) Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 ID=8A VDS = 480V 10 VDS = 300V 8 VDS = 120V 6 4 2 0 4 0 40 16 20 (KF8N60P) (KF8N60F) 102 Operation in this area is limited by RDS(ON) area is limited by RDS(ON) 100µs 100µs 101 1ms 10ms 100 100ms DC 10-1 Tc= 25 C Tj = 150 C 2 Single pulse Drain Current ID (A) Drain Current ID (A) 32 Fig10. Safe Operation Area Fig9. Safe Operation Area 10 100 28 24 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 102 Operation in this 12 8 101 1ms 10ms 100 100ms 10-1 DC Tc= 25 C Tj = 150 C 2 Single pulse 102 101 103 10 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj Drain Current ID (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 10. 2 Revision No : 1 4/7 KF8N60P/F Fig12. Transient Thermal Response Curve (KF8N60P) 100 Transient Thermal Resistance Duty=0.5 0.2 10-1 0.1 0.05 PDM 0.02 t1 0.01 t2 10-2 Single Pulse 10-5 10-4 - Rth(j-c) = 0.81 C/W Max. - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 TIME (sec) Fig13. Transient Thermal Response Curve Transient Thermal Resistance (KF8N60F) 100 Duty=0.5 0.2 0.1 10-1 0.05 PDM 0.02 t1 0.01 t2 - Rth(j-c) = 2.5 C/W Max. - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2008. 10. 2 Revision No : 1 5/7 KF8N60P/F Fig14. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig15. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2008. 10. 2 VGS Revision No : 1 td(on) ton tr td(off) tf toff 6/7 KF8N60P/F Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD di/dt (DUT) IRM IS 0.8 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2008. 10. 2 VGS Revision No : 1 Body Diode Forword Voltage drop 7/7