SEMICONDUCTOR KGH15N120NDA TECHNICAL DATA General Description A N O B Q K H I FEATURES R C J F KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. ・High speed switching G ・Higher system efficiency ・Soft current turn-off waveforms D E L ・Square RBSOA using NPT technology M d P 1 P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 1. GATE 2. COLLECTOR 3. EMITTER TO-3P(N)-E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 24 A 15 A ICM* 45 A IF 15 A IFM 45 A 200 W 80 W Tj 150 ℃ Tstg -55 to + 150 ℃ @TC=25 Collector Current IC @TC=100 Pulsed Collector Current Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current Maximum Power Dissipation @TC=25 PD @TC=100 Maximum Junction Temperature Storage Temperature Range C G E *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) RθJC 0.6 ℃/W Thermal Resistance, Junction to Case (DIODE) RθJC 2.8 ℃/W 2009. 2. 19 Revision No : 1 1/6 KGH15N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=3mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 3 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA Gate Threshold Voltage VGE(th) VGE=VCE, IC=15mA 3.5 5.5 7.5 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A - 2.2 2.7 V - 140 - nC - 12 - nC Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 65 - nC Turn-On Delay Time td(on) - 60 - ns tr - 50 - ns - 180 - ns - 70 - ns - 3.0 - mJ Rise Time VCC=600V, VGE=15V, IC= 15A td(off) Turn-Off Delay Time tf Fall Time VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.6 - mJ Total Switching Loss Ets - 3.6 - mJ Turn-On Delay Time td(on) - 60 - ns tr - 50 - ns - 190 - ns - 100 - ns - 3.1 - mJ Rise Time td(off) Turn-Off Delay Time tf Fall Time VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.8 - mJ Total Switching Loss Ets - 3.9 - mJ Input Capacitance Cies - 1400 - pF Ouput Capacitance Coes - 140 - pF Reverse Transfer Capacitance Cres - 57 - pF MIN. TYP. MAX. UNIT TC=25 - 1.5 1.9 TC=125 - 1.6 - TC=25 - 200 300 IF = 15A TC=125 - 270 - di/dt = 200A/μs TC=25 - 26 34 TC=125 - 30 - VCE=30V, VGE=0V, f=1MHz ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage IF = 15A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current 2009. 2. 19 TEST CONDITION Irr Revision No : 1 V ns A 2/6 KGH15N120NDA Fig 2. Typical Saturation Voltage Characteristics Fig 1. Typical Output Characteristics 17V 20V TC=25 C 160 Common Emitter 15V 140 120 100 12V 80 60 10V 40 20 Collector Current IC (A) Collector Current IC (A) 180 80 V = 15V GE TC = 25 C TC = 125 C 60 40 20 VGE = 7V 0 0 0 2 4 6 8 0 10 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Common Emitter VGE = 15V 3.5 3.0 24A 2.5 IC = 15A 100 75 50 20 Common Emitter TC = 25 C 16 12 8 24A 15A IC = 7.5A 4 0 0 125 4 12 16 20 Fig 6. Capacitance Characteristics 20 4000 Common Emitter TC = 125 C Common Emitter VGE = 0V, f = 1MHZ TC = 25 C 3500 16 3000 Capacitance (pF) Collector - Emitter Voltage VCE (V) Fig 5. Saturation Voltage vs. VGE 12 8 24A 15A Ciss 2500 2000 Coss 1500 Crss 1000 500 IC = 7.5A 0 0 4 8 12 16 Gate - Emitter Voltage VGE (V) 2009. 2. 19 8 Gate - Emitter Voltage VGE (V) Case Temperature TC ( C ) 4 6 Fig 4. Saturation Voltage vs. VGE 4.0 25 4 Collector - Emitter Voltage VCE (V) Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 2 Revision No : 1 20 0 1 10 Collector - Emitter Voltage VCE (V) 3/6 KGH15N120NDA Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance Common Emitter 100 Switching Time (ns) Switching Time (ns) 1000 VCC = 600V, VGE = 15V td(on) tr Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 IC = 15A TC = 25 C TC = 125 C td(off) 100 tf 10 60 70 0 10 Gate Resistance RG (Ω) 20 30 40 50 60 70 Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current 10 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C 1 Eoff Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 0.1 0 10 20 30 40 50 60 Switching Time (ns) Switching Loss (mJ) Eon 100 td(on) tr 70 5 Fig 11. Turn-Off Characteristics vs. Collector Current 20 25 Fig 12. Switching Loss vs. Collector Current 1000 Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C td(off) 100 tf Common Emitter VGE = 15V, RG = 15Ω TC = 25 C TC = 125 C Switching Loss (mJ) 10 Switching Time (ns) 15 Collector Current IC (Α) Gate Resistance RG (Ω) Eon Eoff 1 0.1 10 5 10 15 20 Collector Current IC (Α) 2009. 2. 19 10 Revision No : 1 25 5 10 15 20 25 Collector Current IC (Α) 4/6 KGH15N120NDA Fig 13. Gate Charge Characteristics Common Emitter 100 I MAX (Pulsed) C 14 RL = 40Ω 50µs TC = 25 C 12 Collector Current IC (A) Gate-Emitter Voitage VGE (V) 16 Fig 14. SOA Characteristics 600V 10 400V 8 Vcc = 200V 6 4 2 10 IC MAX (Continuous) 1 0 30 60 90 120 150 1ms Single nonrepetitive pulse DC 0.1 Tc= 25 C 0.01 0 100µs Curves must be derated linearly with increase in temperature 0.1 10 1 100 1000 Collector-Emitter Voltage VCE (V) Gate Charge Qg (nC) Fig 15. Turn-Off SOA Collector Current IC (A) 100 10 Safe Operating Area VGE = 15V, TC =125 C 1 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT Thermal Resistance (Zthjc) 10 1 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 0.01 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC Single Pluse 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration (sec) 2009. 2. 19 Revision No : 1 5/6 KGH15N120NDA Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) Forward Current IF (A) 50 Fig 18. Reverse Recovery Current TC = 25 C TC = 125 C 10 1 TC = 125 C TC = 25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage VF (V) 30 25 di/dt=200A/µs 20 15 di/dt=100A/µs 10 5 0 0 5 10 15 20 25 Forward Current IF (A) Fig 19. Reverse Recovery Time Reverse Recovery Time trr (ns) 400 300 di/dt=100A/µs 200 di/dt=200A/µs 100 0 0 5 10 15 20 25 Forward Current IF (A) 2009. 2. 19 Revision No : 1 6/6