SEMICONDUCTOR KGH15N120NDA TECHNICAL DATA General Description A N O B Q K H I FEATURES R C J F KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. High speed switching G Higher system efficiency D Soft current turn-off waveforms E L Square RBSOA using NPT technology M d P 1 P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 1. GATE 2. COLLECTOR 3. EMITTER TO-3P(N)-E MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V @TC=25 Collector Current 24 A 15 A ICM* 45 A IF 15 A IFM 45 A 200 W 80 W IC @TC=100 Pulsed Collector Current Diode Continuous Forward Current @TC=100 Diode Maximum Forward Current Maximum Power Dissipation @TC=25 PD @TC=100 Maximum Junction Temperature Storage Temperature Range Tj 150 Tstg -55 to + 150 C G E *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) R JC 0.6 /W Thermal Resistance, Junction to Case (DIODE) R JC 2.8 /W 2008. 6. 30 Revision No : 0 1/6 KGH15N120NDA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES ) TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=3mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 3 mA Gate Leakage Current IGES VCE=0V, VGE= - - 100 nA 3.5 5.5 7.5 V - 2.4 2.9 V - 150 - nC - 12 - nC 20V Gate Threshold Voltage VGE(th) VGE=VCE, IC=15mA Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 65 - nC Turn-On Delay Time td(on) - 50 - ns tr - 60 - ns - 250 - ns - 70 - ns - 2.5 - mJ Rise Time VCC=600V, VGE=15V, IC= 15A td(off) Turn-Off Delay Time tf Fall Time VCC=600V, IC=15A, VGE=15V,RG=15 Inductive Load, TC = 25 Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.5 - mJ Total Switching Loss Ets - 3.0 - mJ Turn-On Delay Time td(on) - 60 - ns tr - 70 - ns - 250 - ns - 70 - ns - 2.8 - mJ Rise Time td(off) Turn-Off Delay Time tf Fall Time VCC=600V, IC=25A, VGE=15V, RG=15 Inductive Load, TC = 125 Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.6 - mJ Total Switching Loss Ets - 3.4 - mJ Input Capacitance Cies - 1400 - pF Ouput Capacitance Coes - 140 - pF Reverse Transfer Capacitance Cres - 57 - pF MIN. TYP. MAX. UNIT TC=25 - 1.6 2.5 TC=125 - 1.7 - TC=25 - 200 300 IF = 15A TC=125 - 280 - di/dt = 200A/ s TC=25 - 27 35 TC=125 - 32 - VCE=30V, VGE=0V, f=1MHz ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage IF = 15A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current 2008. 6. 30 TEST CONDITION Irr Revision No : 0 V ns A 2/6 KGH15N120NDA 2008. 6. 30 Revision No : 0 3/6 KGH15N120NDA 2008. 6. 30 Revision No : 0 4/6 KGH15N120NDA 2008. 6. 30 Revision No : 0 5/6 KGH15N120NDA 2008. 6. 30 Revision No : 0 6/6