VCES = 1200 V IC = 40 A HGA40N120FV VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-247 FEATURES 1200V Field Stop Trench Technology Low Saturation Voltage High Switching Frequency G C E Very Soft, Fast Recovery Anti-parallel diode APPLICATION Welding Converters Uninterruptible Power Supply General Purpose Inverters Absolute Maximum Ratings Symbol VCES IC Parameter Collector-Emitter Voltage Value Units 1200 V Collector Current – Continuous (TC = 25℃) 64 A Collector Current – Continuous (TC = 100℃) 40 A – Pulsed ICM Collector Current 160 A IF Diode Forward Current – Continuous (TC = 100℃) 20 A IFM Diode Maximum Forward Current 60 A VGES Gate-Emitter Voltage ±20 V PD (Note 1) Power Dissipation – Continuous (TC = 25℃) 400 W Power Dissipation – Continuous (TC = 100℃) 160 W -55 to +150 ℃ 300 ℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Notes: 1. Pulse width limited by max junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. RθJC(IGBT) Junction-to-Case -- 0.31 RθJC(Diode) Junction-to-Case -- 1.11 RθJA Junction-to-Ambient -- 40 Units ℃/W ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV March 2015 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units 4.0 -- 7.0 V --- 2.0 2.5 2.6 -- V 1200 -- -- V On Characteristics VGE(th) Gate-Emitter Threshold Voltage VCE = VGE, IC = 1.5 mA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15 V, IC = 40 A TC = 25℃ TC = 125℃ Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Zero Gate Voltage Collector Current VCE = 1200 V, VGE = 0 V -- -- 1 mA IGES Gate-Emitter Leakage Current VGE = ±20 V, VCE = 0 V -- -- ±250 ㎁ -- 9150 -- ㎊ -- 295 -- ㎊ -- 76 -- ㎊ Turn-On Time -- 50 -- ㎱ tr Turn-On Rise Time -- 65 -- ㎱ td(off) Turn-Off Delay Time -- 295 -- ㎱ -- 85 -- ㎱ -- 2.3 -- mJ -- mJ Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1.0 MHz Switching Characteristics td(on) tf Turn-Off Fall Time VCC = 600 V, IC = 40 A, RG = 10 Ω, VGE = 15V Inductive load, TC = 25℃ Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 2.2 Ets Total Switching Loss -- 4.5 Turn-On Time -- 90 -- ㎱ tr Turn-On Rise Time -- 70 -- ㎱ td(off) Turn-Off Delay Time -- 415 -- ㎱ -- 165 -- ㎱ -- 2.65 -- mJ td(on) tf Turn-Off Fall Time VCC = 600 V, IC = 40 A, RG = 10 Ω, VGE = 15V Inductive load, TC = 125℃ mJ Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss -- 3.2 -- mJ Ets Total Switching Loss -- 5.85 -- mJ Qg Total Gate Charge -- 225 -- nC Qge Gate-Emitter Charge -- 55 -- nC Qgc Gate-Collector Charge -- 90 -- nC VCC = 600V, IC = 40 A, VGE = 15 V ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV Electrical Characteristics of the IGBT TC=25 °C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge IF = 40 A TC = 25℃ TC = 125℃ TC = 25℃ TC = 125℃ IF = 40 A, di/dt = 200 A/μs TC = 25℃ TC = 125℃ TC = 25℃ TC = 125℃ --- 2.2 2.0 --- V --- 200 325 300 -- ns --- 23 43 35 -- A --- 2500 7000 --- nC ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV Electrical Characteristics of the Diode HGA40N120FV IGBT Characteristics Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 4. Load Current vs. Frequency Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV IGBT Characteristics Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate Resistance Figure 9. Turn-Off Characteristics vs. Gate Resistance Figure 10. Switching Loss vs. Gate Resistance Figure 11. Turn-On Characteristics vs. Collector Current Figure 12. Turn-Off Characteristics vs. Collector Current ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV IGBT Characteristics Figure 13. Switching Loss vs. Collector Current Figure 15. SOA Characteristics Figure 14. Gate Charge Characteristics Figure 16. Turn-Off SOA Figure 17. Transient Thermal Impedance of IGBT ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV Diode Characteristics Forward Current, IF [A] 102 101 100 TJ=125oC TJ=25oC 10-1 10-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward Voltage, VF [V] Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current Figure 20. Stored Charge Figure 21. Reverse Recovery Time ◎ SEMIHOW REV.A0,May 2014 HGA40N120FV Package Dimension TO-247 ◎ SEMIHOW REV.A0,May 2014