FGA25N120AN

FGA25N120AN
TO-3P
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A
• High input impedance
General Description
Employing NPT technology, Kersemi AN series of
provides low conduction and switching losses. The AN
series offers an solution for application such as induction
heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).
C
G
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGA25N120AN
1200
± 20
40
25
75
310
125
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
2014-8-14
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
Typ.
---
Max.
0.4
40
Units
°C/W
°C/W
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FGA25N120AN
Electrical Characteristics of the IGBT T
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 3mA
1200
--
--
V
VGE = 0V, IC = 3mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
3
± 100
mA
nA
3.5
--
5.5
2.5
7.5
3.2
V
V
--
2.9
--
V
--
3.1
--
V
----
2100
180
90
----
pF
pF
pF
-------------------
60
60
170
45
4.8
1.0
5.7
60
60
180
70
5.5
1.4
6.9
200
15
105
14
---90
7.2
1.5
8.7
-------300
23
160
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
nH
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
IC = 25A, VGE = 15V,
TC = 125°C
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
2014-8-14
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 25A,
VGE = 15V
Measured 5mm from PKG
2
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FGA25N120AN
120
180
TC = 25℃
20V
17V
15V
160
12V
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
100
Collector Current, IC [A]
Collector Current, IC [A]
140
120
100
VGE = 10V
80
60
40
80
60
40
20
20
0
0
0
2
4
6
8
0
10
2
Fig 1. Typical Output Characteristics
50
Common Emitter
VGE = 15V
Vcc = 600V
load Current : peak of square wave
40A
40
3.5
3.0
Load Current [A]
Collector-Emitter Voltage, VCE [V]
6
Fig 2. Typical Saturation Voltage Characteristics
4.0
IC = 25A
30
20
2.5
10
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 60W
2.0
0
25
50
75
100
125
0.1
1
10
Case Temperature, T C [℃]
100
1000
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
Common Emitter
TC = 125℃
Collector-Emitter Voltage, VCE [V]
Common Emitter
TC = 25℃
Collector-Emitter Voltage, VCE [V]
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
16
12
8
40A
4
25A
16
12
8
40A
4
25A
IC = 12.5A
IC = 12.5A
0
0
0
4
8
12
16
20
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
Fig 6. Saturation Voltage vs. VGE
2014-8-14
3
20
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FGA25N120AN
4000
Common Emitter
V GE = 0V, f = 1MHz
T C = 25℃
3500
100
Switching Time [ns]
Capacitance [pF]
3000
Ciss
2500
2000
1500
Coss
1000
tr
td(on)
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 25A
TC = 25℃
TC = 125℃
Crss
500
10
0
1
0
10
10
20
Common Emitter
VCC = 600V, VGE = ± 15V
IC = 25A
TC = 25℃
TC = 125℃
50
60
Common Emitter
V CC = 600V, VGE = ± 15V
IC = 25A
T C = 25℃
T C = 125℃
td(off)
10
Switching Loss [mJ]
Switching Time [ns]
40
70
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Fig 7. Capacitance Characteristics
1000
30
Gate Resistance, RG [Ω]
Collector-Emitter Voltage, VCE [V]
100
tf
Eon
Eoff
1
10
0
10
20
30
40
50
60
70
0
10
20
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Switching Time [ns]
Switching Time [ns]
100
td(on)
30
40
50
60
70
td(off)
100
tf
10
Collector Current, IC [A]
20
30
40
50
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
2014-8-14
50
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃
TC = 125℃
tr
20
40
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
VGE = ± 15V, RG = 10Ω
TC = 25℃
TC = 125℃
10
30
Gate Resistance, R G [Ω]
Fig 12. Turn-Off Characteristics vs.
Collector Current
4
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FGA25N120AN
16
Common Emitter
VGE = ± 15V, RG = 10 Ω
TC = 25℃
TC = 125℃
Gate-Emitter Voltage, VGE [V]
Switching Loss [mJ]
10
Common Emitter
RL = 24Ω
TC = 25℃
14
Eon
Eoff
1
0.1
12
600V
10
400V
8
Vcc = 200V
6
4
2
0
10
20
30
40
50
0
20
Collector Current, IC [A]
40
60
80
100
120
140
160
180
200
Gate Charge, Q g [nC]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
100
Ic MAX (Pulsed)
100
50µs
100 µs
Collector Current, IC [A]
Collector Current, Ic [A]
Ic MAX (Continuous)
10
1ms
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
10
Safe Operating Area
VGE = 15V, TC = 125℃
1
0.1
1
10
100
1000
1
10
Collector - Emitter Voltage, V CE [V]
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Thermal Response [Zthjc]
10
1
0.5
0.1
0.2
0.1
0.05
0.01
Pdm
Pdm
0.02
t1
t1
t2
t2
0.01
single pulse
1E-3
1E-5
1E-4
Duty
Dutyfactor
factorD
D==t1
t1// t2
t2
Peak
PeakTj
Tj==Pdm
Pdm××Zthjc
Zthjc++TTCC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
2014-8-14
5
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FGA25N120AN
Package Dimension
TO-3P (FS PKG CODE)
15.60 ±0.20
3.80 ±0.20
3.50 ±0.20
2.00 ±0.20
+0.15
3.00 ±0.20
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
1.50 –0.05
16.50 ±0.30
9.60 ±0.20
4.80 ±0.20
19.90 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
2014-8-14
5.45TYP
[5.45 ±0.30]
6
0.60 –0.05
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