SEMICONDUCTOR TECHNICAL DATA KGT15N120KDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ・High speed switching ・High system efficiency ・Short Circuit Withstand Times ≻10us ・Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 30 A 15 A ICM* 45 A IF 15 A IFM 45 A 200 W 80 W Tj 150 ℃ Tstg -55 to + 150 ℃ @TC=25℃ Collector Current @TC=100℃ Pulsed Collector Current Diode Continuous Forward Current @TC=100℃ Diode Maximum Forward Current Maximum Power Dissipation @TC=25℃ @TC=100℃ Maximum Junction Temperature Storage Temperature Range IC PD *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC CHARACTERISTIC E SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.6 ℃/W Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 ℃/W Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W C G 2011. 5. 25 Revision No : 0 1/8 KGT15N120KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1.0mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=15mA 4.0 5.5 7.0 V VGE=15V, IC=15A - 1.90 2.30 V VGE=15V, IC=15A, TC = 125℃ - 2.25 - V VGE=15V, IC=30A - 2.35 - V - 115 170 nC - 13 - nC Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 40 - nC Turn-On Delay Time td(on) - 50 - ns tr - 30 - ns - 260 - ns - 100 180 ns - 2.7 4.0 mJ Rise Time Turn-Off Delay Time Fall Time VCC=600V, VGE=15V, IC= 15A td(off) tf VCC=600V, IC=15A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.55 0.90 mJ Total Switching Loss Ets - 3.25 4.90 mJ Turn-On Delay Time td(on) - 50 - ns tr - 30 - ns - 270 - ns - 150 - ns - 2.9 4.2 mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=600V, IC=15A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.8 1.2 mJ Total Switching Loss Ets - 3.7 5.4 mJ Input Capacitance Cies - 1900 - pF Ouput Capacitance Coes - 80 - pF Reverse Transfer Capacitance Cres - 55 - pF Short Circuit Withstand Time tsc 10 - - μs VCE=30V, VGE=0V, f=1MHz VCC=600V, VGE=15V, TC=100℃ Marking 2011. 5. 25 Revision No : 0 2/8 KGT15N120KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 1.8 2.5 TC=125℃ - 1.9 - TC=25℃ - 230 300 TC=125℃ - 270 - IF = 15A TC=25℃ - 24 31 di/dt = 200A/μs TC=125℃ - 27 - TC=25℃ - 2400 4000 TC=125℃ - 3640 - IF = 15A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2011. 5. 25 TEST CONDITION Irr Qrr Revision No : 0 UNIT V ns A nC 3/8 KGT15N120KDA Typical Performance Characteristics 2011. 5. 25 Revision No : 0 4/8 KGT15N120KDA Typical Performance Characteristics (Continued) 2011. 5. 25 Revision No : 0 5/8 KGT15N120KDA Typical Performance Characteristics (Continued) 2011. 5. 25 Revision No : 0 6/8 KGT15N120KDA Typical Performance Characteristics 2011. 5. 25 Revision No : 0 7/8 KGT15N120KDA Definition Switching Time & Loss. 2011. 5. 25 Revision No : 0 8/8