SEMICONDUCTOR TECHNICAL DATA KGF40N60KDA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. _ + _ + _ + _ + _ + _ + FEATURES ・High speed switching ・High system efficiency ・Short Circuit Withstand Times ≻10us _ + _ + _ + _ + _ + ・Extremely enhanced avalanche capability _ + _ + _ + _ + MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES ±20 V 80 A 40 A ICM* 120 A IF 40 A IFM 80 A 250 W 100 W Tj 150 ℃ Tstg -55 to + 150 ℃ @Tc=25℃ Collector Current @Tc=100℃ Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Maximum Power Dissipation @Tc=25℃ @Tc=100℃ Maximum Junction Temperature Storage Temperature Range IC PD *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC E C CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.5 ℃/W Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.0 ℃/W Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W 2013. 1. 3 Revision No : O G 1/8 KGF40N60KDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES Collector Cut-off Current Gate Leakage Current TEST CONDITION MIN. TYP. MAX. UNIT VGE=0V , IC=250μA 600 - - V ICES VGE=0V, VCE=600V - - 250 μA IGES VCE=0V, VGE=±20V - - ±100 nA VGE=VCE, IC=4mA 4.5 5.5 7 V VGE=15V, IC=40A - 1.65 2.1 V VGE=15V, IC=80A - 2.25 - V VGE=15V, IC=40A, TC = 125℃ - 1.9 - V - 150 - nC - 25 - nC Static VGE(th) Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 80 - nC Turn-On Delay Time td(on) - 50 - ns tr - 45 - ns - 200 - ns - 35 - ns Rise Time Turn-Off Delay Time Fall Time VCC=300V, VGE=15V, IC= 40A td(off) tf VCC=300V, IC=40A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ (Note 1) Turn-On Switching Loss Eon - 1.1 - mJ Turn-Off Switching Loss Eoff - 0.65 - mJ Total Switching Loss Ets - 1.75 - mJ Turn-On Delay Time td(on) - 50 - ns tr - 45 - ns - 210 - ns - 45 - ns Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=300V, IC=40A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ (Note 1) Turn-On Switching Loss Eon - 1.2 - mJ Turn-Off Switching Loss Eoff - 0.8 - mJ Total Switching Loss Ets - 2.0 - mJ Input Capacitance Cies - 3100 - pF Ouput Capacitance Coes - 220 - pF Reverse Transfer Capacitance Cres - 120 - pF Short Circuit Withstand Time tsc 10 - - μs VCE=30V, VGE=0V, f=1MHz VCC=300V, VGE=15V, TC=100℃ Note 1 : Energy loss include tail current and diode reverse recovery. Marking 2013. 1. 3 Revision No : O 2/8 KGF40N60KDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 1.8 2.3 TC=100℃ - 1.5 - TC=25℃ - 90 - TC=100℃ - 105 - IF = 40A TC=25℃ - 16 - di/dt = 600A/μs TC=100℃ - 29 - TC=25℃ - 0.73 - TC=100℃ - 1.55 - IF = 40A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2013. 1. 3 TEST CONDITION Irr V ns A μC Qrr Revision No : O UNIT 3/8 KGF40N60KDA 2013. 1. 3 Revision No : O 4/8 Switching Time (ns) KGF40N60KDA Gate Resistance RG (Ω) 2013. 1. 3 Revision No : O 5/8 KGF40N60KDA 2013. 1. 3 Revision No : O 6/8 KGF40N60KDA Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) Fig 18. Reverse Recovery Current Forward Current IF (A) 300 TC = 125 C 100 TC = 25 C 10 1 0 1 2 3 Forward Voltage VF (V) 30 25 di/dt=600A/µs 20 15 di/dt=400A/µs 10 5 0 0 10 20 30 40 50 60 Forward Current IF (A) Fig 19. Reverse Recovery Time Reverse Recovery Time trr (ns) 80 70 di/dt=400A/µs 60 50 40 di/dt=600A/µs 30 20 10 0 0 10 20 30 40 50 60 Forward Current IF (A) 2013. 1. 3 Revision No : O 7/8 KGF40N60KDA 2013. 1. 3 Revision No : O 8/8