KEC KGF50N60KDA

SEMICONDUCTOR
TECHNICAL DATA
KGF50N60KDA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
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FEATURES
・High speed switching
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・High system efficiency
・Short Circuit Withstand Times ≻10us
・Extremely enhanced avalanche capability
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MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
±20
V
100
A
50
A
ICM*
150
A
IF
50
A
IFM
100
A
277
W
111
W
Tj
150
℃
Tstg
-55 to + 150
℃
@Tc=25℃
Collector Current
@Tc=100℃
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100℃
Diode Maximum Forward Current
Maximum Power Dissipation
@Tc=25℃
@Tc=100℃
Maximum Junction Temperature
Storage Temperature Range
IC
PD
*Repetitive rating : Pulse width limited by max. junction temperature
E
C
G
THERMAL CHARACTERISTIC
CHARACTERISTIC
SYMBOL
MAX.
UNIT
Thermal Resistance, Junction to Case (IGBT)
Rt h JC
0.45
℃/W
Thermal Resistance, Junction to Case (DIODE)
Rt h JC
1.0
℃/W
Thermal Resistance, Junction to Ambient
Rt h JA
40
℃/W
2013. 3. 06
Revision No : 1
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KGF50N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
BVCES
Collector Cut-off Current
Gate Leakage Current
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VGE=0V , IC=250μA
600
-
-
V
ICES
VGE=0V, VCE=600V
-
-
250
μA
IGES
VCE=0V, VGE=±20V
-
-
±100
nA
VGE=VCE, IC=5mA
4.5
5.5
7
V
VGE=15V, IC=50A
-
1.65
2.1
V
VGE=15V, IC=100A
-
2.25
-
V
VGE=15V, IC=50A, TC = 125℃
-
1.9
-
V
-
200
-
nC
-
30
-
nC
Static
VGE(th)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
VCE(sat)
Dynamic
Total Gate Charge
Qg
Gate-Emitter Charge
Qge
Gate-Collector Charge
Qgc
-
100
-
nC
Turn-On Delay Time
td(on)
-
60
-
ns
tr
-
50
-
ns
-
250
-
ns
-
45
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
VCC=300V, VGE=15V, IC= 50A
td(off)
tf
VCC=300V, IC=50A, VGE=15V,RG=10Ω
Inductive Load, TC = 25℃ (Note 1)
Turn-On Switching Loss
Eon
-
1.2
-
mJ
Turn-Off Switching Loss
Eoff
-
0.9
-
mJ
Total Switching Loss
Ets
-
2.1
-
mJ
Turn-On Delay Time
td(on)
-
60
-
ns
tr
-
50
-
ns
-
260
-
ns
-
50
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
VCC=300V, IC=50A, VGE=15V, RG=10Ω
Inductive Load, TC = 125℃ (Note 1)
Turn-On Switching Loss
Eon
-
1.2
-
mJ
Turn-Off Switching Loss
Eoff
-
1.0
-
mJ
Total Switching Loss
Ets
-
2.2
-
mJ
Input Capacitance
Cies
-
4000
-
pF
Ouput Capacitance
Coes
-
250
-
pF
Reverse Transfer Capacitance
Cres
-
150
-
pF
Short Circuit Withstand Time
tsc
10
-
-
μs
VCE=30V, VGE=0V, f=1MHz
VCC=300V, VGE=15V, TC=100℃
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
2013. 3. 06
Revision No : 1
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KGF50N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
SYMBOL
VF
Diode Forward Voltage
MIN.
TYP.
MAX.
TC=25℃
-
1.7
2.5
TC=100℃
-
2.0
-
TC=25℃
-
100
200
TC=100℃
-
120
-
IF = 50A
TC=25℃
-
20
40
di/dt = 600A/μs
TC=100℃
-
30
-
TC=25℃
-
1.2
3.5
TC=100℃
-
2.2
-
IF = 50A
trr
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2013. 3. 06
TEST CONDITION
Irr
V
ns
A
μC
Qrr
Revision No : 1
UNIT
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KGF50N60KDA
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KGF50N60KDA
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KGF50N60KDA
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KGF50N60KDA
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Revision No : 1
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KGF50N60KDA
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Revision No : 1
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