SEMICONDUCTOR KTB2510 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER DARLINGTON APPLICATION. Q B K I F A E FEATURES C ・Complementary to KTD1510 G J H ・Recommended for 60W Audio Amplifier Output Stage. L D MAXIMUM RATING (Ta=25℃) CHARACTERISTIC d SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -10 A Base Current IB -1 A Collector Power Dissipation (Tc=25℃) PC 100 W Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 Φ3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR (HEAT SINK) Storage Temperature Range 3. EMITTER TO-3P(N) EQUIVALENT CIRCUIT EMITTER 70Ω BASE COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 μA V(BR)CEO IC=-30mA, IB=0 -150 - - V hFE VCE=-4V, IC=-7A 5000 12000 20000 Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V fT VCE=-12V, IC=-2A - 50 - MHz VCB=-10V, IE=0, f=1MHz - 230 - pF Collector-Emitter Breakdown Voltage DC Current Gain Transition Frequency Collector Output Capacitance 2008. 4. 18 Revision No : 2 Cob 1/3 KTB2510 2008. 4. 18 Revision No : 2 2/3 KTB2510 2008. 4. 18 Revision No : 2 3/3