SEMICONDUCTOR KTB1424 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A High DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A) C P S Complementary to KTD2424. G B E ) K MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -10 V Collector Current IC -3 A Base Current IB -0.5 A PC 25 W Tj 150 Tstg -55 150 L R M J CHARACTERISTIC L D D N N 2 H 3 S 0.5 Typ G H J K L 1. BASE Q 1 M N P Q R MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES 2. COLLECTOR Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 3. EMITTER TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -20 A Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -100 A V(BR)CEO IC=-10mA, IB=0 -60 - - V hFE(1) VCE=-2V, IC=-1A 3000 - - hFE(2) VCE=-2V, IC=-3A 1000 - - Collector-Emitter VCE(sat) IC=-3A, IB=-30mA - - -1.5 Base-Emitter VBE(sat) IC=-3A, IB=-30mA - - -2.8 Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage 2007. 5. 21 V Revision No : 2 1/1