SEMICONDUCTOR KTC4521F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. A P S Excellent Switching Times. B E G : ton=0.5 S(Max.), tf=0.3 S(Max.), at IC=4A. K High Collector Voltage : VCEO=500V. L L R J M ) D CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V IC 5 D N 1 DC N 2 H 3 A Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ICP 10 IB 2 A PC 40 W Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC S 0.5 Typ 2. COLLECTOR Collector Current Pulse M N P Q R G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES C 3. EMITTER TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=500V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A 500 - - V Collector-Emitter Sustaning Voltage VCEX(SUS) Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.6A - - 1 V Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=0.6A - - 1.5 V VCE=5V, IC=0.6A 15 - 50 VCE=5V, IC=3A 8 - - VCB=10V, IE=0, f=1MHz - 80 - pF fT VCE=10V, IC=0.6A - 18 - MHz ton 20µS - - 0.5 - - 3 - - 0.3 hFE (1) (Note) IC=2.5A, IB1=-IB2=1A L=1mH, Clamped DC Current Gain Cob Collector Output Capacitance Transition Frequency Turn On Time Switching Time INPUT tstg Storage Time IB1 IB2 tf Fall Time Note : hFE (1) Classification R:15 2007. 5. 22 OUTPUT 30, O:20 Revision No : 0 I B1 50Ω hFE (2) IB1=0.8A , I B2 =-1.6A DUTY CYCLE < = 1% I B2 VCC =200V S 40, Y:30 50 1/3 KTC4521F h FE - I C I C - VCE 1000 5 IB =600mA DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 4 0mA I B =40 I B =1.2A mA I B =200 3 A I B =100m 2 I B =50mA 1 I B =20mA I B =0 0 0 2 VCE =5V 500 I B =800mA I B =1A 4 6 200 100 50 20 10 5 2 8 10 0 0.01 0.02 COLLECTOR EMITTER VOLTAGE VCE (V) 0.05 0.1 0.2 0.5 1 5 2 10 COLLECTOR CURRENT I C (A) V BE - I C 10 I C /I B=5 5 6 COLLECTOR CURRENT I C (A) 2 V BE(sat) 1 0.5 0.2 0.1 VCE(sat) 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 4 3 2 1 0 0.1 10 0.2 0.4 0.6 0.8 1.0 COLLECTOR CURRENT I C (A) BASE EMITTER VOLTAGE V BE (V) SWITCHING CHARACTERISTICS SAFE OPERATING AREA t stg t on tf 0.1 0.05 OP µS 0.2 DC 2 1 0.5 ER mS 0.5 *50µS *1 m S 00 1 20 I C MAX.(Pulse) 10 IC MAX. (CONTINUOUS) 5 *1 2 0 *1 COLLECTOR CURRENT I C (A) 5 AT IO N 0.2 0.1 * SINGLE NONREPETITIVE 0.05 PLUS Ta=25 C CURVES MUST BE DERATED 0.02 0.01 0.1 0.2 0.5 1 2 COLLECTOR CURRENT I C (A) 2007. 5. 22 1.2 100 50 10 SWITCHING TIME (µS) VCE =5V 5 VCEO MAX. SATURATION VOLTAGE VBE(sat) , VCE(sat) (V) VCE(sat) , V BE(sat) - I C Revision No : 0 5 10 0.02 LINEARLY WITH INCREASE IN TEMPERATURE 0.01 1 2 5 10 50 100 200 500 1000 COLLECTOR EMITTER VOLTAGE VCE (A) 2/3 KTC4521F Pc - Ta COLLECTOR CURRENT I C (A) 100 50 I B2=-1A L=200µH 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 2000 5000 10000 COLLECTOR EMITTER VOLTAGE V CE (A) 2007. 5. 22 Revision No : 0 COLLECTOR POWER DISSIPATION P C (W) REVERSE BIAS SAFE OPERATING AREA 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) 3/3