SEMICONDUCTOR KTC4419 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. A C P FEATURES B E G Excellent Switching Times. : ton=1.0 S(Max.), tf=0.5 S(Max.) at IC=1.5A. K High Collector Voltage : VCEO=400V. L L R J M D D ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V DC IC 5 Pulse ICP 10 IB 2 A PC 30 W Tj 150 Tstg -55 150 N 1 N 2 H 3 S 0.5 Typ G H J K L 1. BASE Q MAXIMUM RATING (Ta=25 M N P Q R MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S 2. COLLECTOR 3. EMITTER Collector Current A TO-220IS Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=500V, IE=0 - - 100 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 A V(BR)CEO IC=10mA, IB=0 400 - - V hFE(1) VCE=4V, IC=0.1A 20 - - Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) VCE=4V, IC=1.5A 10 - 40 Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB==0.3A - - 1.0 V fT VCE=12V, IC=0.3A - 20 - MHz - - 1.0 133Ω - - 2.5 VCC =200V - - 0.5 Transition Frequency Turn-on Time Switching Time 20µS INPUT Storage Time tstg Revision No : 3 tf I B1 IB1 IB2 Fall Time 2007. 5. 22 OUTPUT ton IB1=0.15A , I B2 =-0.3A DUTY CYCLE < = 1% I B2 S 1/3 KTC4419 VCE(sat) - I C COMMON EMITTER VCE =4V Tc=125 C Tc=25 C Tc=-55 C 10 5 3 0.01 0.05 0.1 0.5 1 5 COMMON EMITTER I C /I B =5 2 1 0 0.01 0.05 0.1 I C - V BE BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR CURRENT IC (A) COMMON EMITTER VCE =4V C 3 C 25 Tc= -55 C =1 Tc 25 Tc= 1 0 0 1 2 COMMON EMITTER 2 I C /I B=5 1 0 0.01 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A) tf 0.1 COLLECTOR CURRENT I C (A) 2007. 5. 22 I C MAX.(PULSED) 10 5 1m IC MAX. (CONTINUOUS) 1 0.5 0.1 0.05 Revision No : 3 5 S 10m 50µ S µS 100 S SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.01 1 5 N 0.5 0.5 1 IO SWITCHING TIME (µS) 1 0.1 0.5 AT ER OP C C 5 D. a=2 T t stg t on 0.1 SAFE OPERATING AREA ~ 200V VCC = I C :I B1 :I B2 =10:1:2 5 0.05 COLLECTOR CURRENT I C (A) SWITCHING CHARACTERISTICS 10 5 V BE(sat) - I C 5 2 1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 4 0.5 2 5 10 50 VCEO MAX. 50 COLLECTOR-EMITTER DC CURRENT GAIN h FE 100 SATURATION VOLTAGE VCE(sat) (V) h FE - I C 100 500 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/3 KTC4419 30 1 REVERSE BIAS SAFE OPERATING AREA 20 10 2 0 I C =I B =5(IB =-2I B ) 5.0 Lcoil=100µH 4.0 3.0 2.0 1.0 0 0 50 100 AMBIENT TEMPERATURE Ta ( C) 2007. 5. 22 6.0 1 Tc=Ta INFINITE HEAT SINK 2 NO HEAT SINK COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION Pc (W) Pc - Ta Revision No : 3 150 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VCE (V) 3/3