SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A B D C E F FEATURES ・Excellent Switching Times G : ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1A ・High Collector Voltage : VCBO=700V. H DIM A B C D E F G H J K L M N O P J K L MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V DC IC 1.5 Pulse ICP 3 IB 0.75 Collector Current Base Current Collector Power Ta=25℃ Dissipation Tc=25℃ Junction Temperature Storage Temperature Range M N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX A TO-126 A 1.5 PC W 20 Tj 150 ℃ Tstg -55～150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 μA Collector Cut-off Current ICBO VCB=700V, IE=0 - - 10 μA hFE(1) (Note) VCE=2V, IC=0.5A 9 - 38 VCE=2V, IC=1A 5 - - IC=0.5A, IB=0.1A - - 0.5 IC=1A, IB=0.25A - - 1 IC=1.5A, IB=0.5A - - 3 IC=0.5A, IB=0.1A - - 1 IC=1A, IB=0.25A - - 1.2 VCB=10V, f=0.1MHz, IE=0 - 21 - pF 4 - - MHz - - 1.1 μS - - 4.0 μS - - 0.7 μS DC Current Gain hFE(2) Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Collector Output Capacitance Cob Transition Frequency fT VCE=10V, IC=0.1A Turn-On Time ton 300µS Storage Time Fall Time Note : hFE Classification 2009. 8. 19 tstg tf V OUTPUT IB1 INPUT I B1 125Ω IB2 IB1=I B2 =0.2A DUTY CYCLE < = 2% V I B2 VCC =125V R:9～15, O:13～21, Y:20~38 Revision No : 10 1/2 MJE13003 DC CURRENT GAIN T j =150 C 30 T j =25 C T j =-55 C 10 5 3 1 0.01 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) BASE-EMITTER VOLTAGE V BE(sat) (V) 50 1.4 COMMON EMITTER VCE =2V 0.35 0.03 0.1 0.3 1 1 Tj =-55 C 0.8 Tj =25 C Tj =25 C 0.6 Tj =150 C 0.03 1 2 SWITCHING CHARACTERISTIC 10 5 0.20 0.15 T j =150 C Tj =25 C 0.05 VCC =125V IC /IB =5 t stg 3 1 0.5 tf 0.3 T j =-55 C 0 0.01 0.03 0.1 0.3 1 0.1 0.01 2 0.03 0.1 0.3 1 2 COLLECTOR CURRENT I C (A) P C - Ta SAFE OPERATING AREA 25 COLLECTOR CURRENT I C (A) 10 20 15 10 5 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) Revision No : 10 200 I C MAX.(PULSED) * 3 1 1 5m mS 00µ S S * * * (DC) 1 µS 10 POWER DISSIPATION PC (W) 0.3 VCE(sat) - I C COLLECTOR CURRENT I C (A) 2009. 8. 19 0.1 COLLECTOR CURRENT I C (A) 0.25 0.10 1.2 COLLECTOR CURRENT I C (A) COMMON EMITTER I C /I B =3 0.30 V BE(sat) @I C /I B =3 V BE(on) @VCE =2V 0.4 0.01 2 SWITCHING TIME (µs) DC CURRENT GAIN h FE 100 V BE(sat) - I C * 0.3 0.1 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.03 0.01 1 3 10 30 100 300 1k COLLECTOR EMITTER VOLTAGE V CE (V) 2/2