SEMICONDUCTOR KTC4520F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. A C P ・Excellent Switching Times. B E G : ton=0.5μS(Max.), tf=0.3μS(Max.), at IC=2A. K ・High Collector Voltage : VCEO=500V. L L R SYMBOL RATING UNIT Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V IC 3 ICP 6 Base Current IB 1 A Collector Power Dissipation (Tc=25℃) PC 30 W Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ D N 1 DC Collector Current Pulse Storage Temperature Range N 2 H 3 M N P Q R S 0.5 Typ G H J K L 1. BASE Q CHARACTERISTIC D J M MAXIMUM RATING (Ta=25℃) MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S FEATURES 2. COLLECTOR A 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=500V, IE=0 - - 10 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 μA 500 - - V Collector-Emitter Sustaning Voltage VCEX(SUS) Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 1 V Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A - - 1.5 V hFE (1) (Note) VCE=5V, IC=0.3A 15 - 50 hFE (2) VCE=5V, IC=1.5A 8 - - VCB=10V, IE=0, f=1MHz - 50 - pF VCE=10V, IC=0.3A - 18 - MHz DC Current Gain Collector Output Capacitance fT Transition Frequency Switching Time Cob IC=1.5A, IB1=-IB2=0.6A L=2mH, Clamped Turn On Time ton - - 0.5 Storage Time tstg - - 3 Fall Time tf - - 0.3 μS Note : hFE (1) Classification R:15～30, O:20～40, Y:30～50 2010. 6. 17 Revision No : 1 1/3 I C - VBE COLLECTOR CURRENT I C (A) 4 VCE =5V 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 BASE-EMITTER VOLTAGE VBE (V) STATURATION VOLTAGE V BE(sat) , VCE(sat) (V) KTC4520F 10 I C /I B =5 5 2 V BE(sat) 1 0.5 0.2 0.1 V CE(sat) 0.05 0.02 0.01 COLLECTOR CURRENT I C (A) 100 50 20 10 5 2 1 0.01 0.02 5 2 10 4 A I B =500m I B =400mA I =300mA 3 B I B =200mA 2 I B =100mA I B =50mA 1 I B =20mA I B =0mA 0 0.05 0.1 0.2 0.5 1 2 5 1 10 S 0µ CUREVES MUST BE DERATED 6 7 8 9 10 2 1 0.5 0.2 0.1 0.05 0.02 0.01 100 200 500 COLLECTOR-EMITTER VOLTAGE VCE (V) Revision No : 1 5 5 COLLECTOR CURRENT I C (A) N 0.02 0.01 * SINALE NONREPETITIVE 0.005 PULS Ta=25 C 0.002 LINEARLY WITH INCREASE IN TEMPERATURE 0.001 1 2 5 10 30 4 10 *5 µS 00 C O Tc PE =2 RA 5 T C IO *1 D * 0m 1mS PC S =3 0W *1 3 REVERSE BIAS SAFE OPERATING AREA SAFE OPERATING AREA 10 I C MAX.(Pulse)* 5 IC MAX. (CONTINUOUS) 2 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 1 V CE =5V 200 2010. 6. 17 0.5 5 500 0.2 0.1 0.05 0.1 0.2 I C - V CE 1000 2 1 0.5 0.05 0.02 COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN h FE V CE(sat), V BE(sat) - I C 1000 I B 2=-0.6A L=200µH 10 20 50 100 200 500 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTC4520F SWITCHING CHARACTERISTICS 10 50 5 40 SWITCHING TIME (µS) COLLECTOR POWER DISSIPATION PC (W) Pc - Ta 30 20 25 50 75 100 125 150 175 200 225 250 AMBIENT TEMPERATURE Ta ( C) 2010. 6. 17 1 t stg 0.5 t on 0.2 tf 0.1 0.05 10 0 2 Revision No : 1 0.02 0.01 10 0.2 0.5 1 2 5 10 COLLECTOR CURRENT I C (A) 3/3