SEMICONDUCTOR KTA2014V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). G A 1 H ᴌComplementary to KTC4075V. D 2 ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). 3 K ᴌVery Small Package. P J C MAXIMUM RATING (Ta=25ᴱ) P DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -30 mA Collector Power Dissipation PC 100 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range 1. EMITTER 2. BASE 3. COLLECTOR VSM Marking Type Name S h FE Rank ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 Ọ A 70 - 400 - -0.1 -0.3 V 80 - - MHz - 4 7 pF - 1.0 10 dB hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Cob Collector Output Capacitance Noise Figure NF VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10kή Note : hFE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400 2001. 7. 20 Revision No : 0 1/3 KTA2014V I C - VCE -200 3k COMMON EMITTER Ta=25 C I B =-2.0mA COMMON EMITTER DC CURRENT GAIN h FE I B =-1.5mA -160 I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 0 -1 -2 -3 500 Ta=25 C Ta=-25 C 100 VCE =-1V -4 -5 -6 30 -0.1 -7 COLLECTOR-EMITTER VOLTAGE V CE (V) -0.3 -1 COMMON EMITTER I C /I B =10 -0.5 -0.3 -0.1 0 10 = Ta -0.05 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -300 -1 -0.5 -0.3 -0.1 -0.1 -300 -0.3 -1 -3 100 50 30 -1 -3 -300 -10 -30 -100 COLLECTOR CURRENT I C (mA) Revision No : 0 -300 COMMON EMITTER VCE =-6V -300 -100 -30 00 C BASE CURRENT IB (µA) 500 300 -0.3 -100 -1k COMMON EMITTER VCE =-10V Ta=25 C 1k -30 I B - V BE Ta=1 3k -10 COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) -100 COMMON EMITTER I C/I B=10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 2001. 7. 20 -30 -10 -1 10 -0.1 -10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -0.01 -0.1 VCE =-6V Ta=100 C 300 50 I B =0mA 0 1k -10 Ta=2 5 C Ta=-2 5 C COLLECTOR CURRENT I C (mA) -240 h FE - I C -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 COLLECTOR POWER DISSIPATION PC (mW) KTA2014V Pc - Ta 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2001. 7. 20 Revision No : 0 3/3