SEMICONDUCTOR KTA1504S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). 3 G A 2 H ᴌComplementary to KTC3875S. 1 RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 mA Base Current IB -30 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range J C SYMBOL M K CHARACTERISTIC P N P MAXIMUM RATING (Ta=25ᴱ) D : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. AS Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Ọ A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 Ọ A 70 - 400 - -0.1 -0.3 V 80 - - MHz - 4.0 7.0 pF - 1.0 10 dB hFE(Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1kHz, Rg=10kή Note : hFE Classification O:70ᴕ140 , Y:120ᴕ240 , GR(G):200ᴕ400 2001. 2. 24 Revision No : 2 1/2 KTA1504S h FE - I C I C - V CE -2.0 -200 3k COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -240 -1.5 -160 -1.0 -120 -0.5 -80 I B =-0.2mA -40 0 -1 -2 -3 -4 -5 1k 500 Ta=100 C 300 Ta=25 C Ta=-25 C 100 50 0 0 COMMON EMITTER -6 30 -0.1 -7 -0.3 -1 VCE(sat) - I C -100 00 C =1 Ta -30 -0.3 -1 -3 -10 Ta=25 C Ta=-25 C -30 -100 -300 Ta=2 5 C Ta=25 C Ta=1 00 C -10 -3 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE VBE (V) 2001. 2. 24 1k 500 300 100 50 30 -0.1 -0.3 -1 -3 -10 -30 -100 Pc - Ta -30 -300 COMMON EMITTER VCE =-10V Ta=25 C I B - V BE -100 -0.3 3k COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =-6V -300 -100 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) -10 -0.1 -1k BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -300 -50 -30 fT - IC COMMON EMITTER I C /I B =10 -500 -10 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1k -3 Revision No : 2 -1.2 -300 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2