SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌHigh hFE : hFE=70ᴕ700. 3 G A 2 D : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). 1 ᴌComplementary to KTA1504S. P J N C P MAXIMUM RATING (Ta=25ᴱ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K CHARACTERISTIC DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. AL Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 Ọ A 70 - 700 - 0.1 0.25 V 80 - - MHz - 2.0 3.5 pF - 1.0 10 dB hFE(Note) DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance Noise Figure Note : hFE Classification 2001. 2. 24 NF O:70ᴕ140, Y:120ᴕ240, Revision No : 2 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10kή GR(G):200ᴕ400, BL(L):350ᴕ700 1/3 KTC3875S h FE - I C 280 3k COMMON EMITTER 240 Ta=25 C 5.0 6.0 200 3.0 DC CURRENT GAIN h FE 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 COMMON EMITTER 1k 500 300 100 50 30 V CE =1V 10 5 0.1 6 0.3 1 30 COMMON EMITTER I C /I B =10 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.3 1 3 10 30 100 10 1 0.5 0.3 0.1 -10 -30 -100 EMITTER CURRENT I E (mA) 2001. 2. 24 3 Revision No : 2 10 30 100 300 -300 - V BE COMMON EMITTER VCE =6V 1k 300 100 Ta=1 00 C BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) 50 30 -3 1 B 3k 100 -1 0.3 I 500 300 -0.3 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =10V Ta=25 C 1k 100 5 3 0.1 300 fT - IE 3k 30 COMMON EMITTER I C /I B =10 Ta=25 C COLLECTOR CURRENT I C (mA) 10 -0.1 10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION V CE(sat) (V) V CE(sat) - I C 0.01 0.1 3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 3 VCE =6V Ta=100 C Ta=25 C Ta=-25 C 30 10 Ta=2 5 C Ta=-2 5 C COLLECTOR CURRENT I C (mA) I C - V CE 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3875S h PARAMETER - V CE h PARAMETER - I C 1k GR h fe Y O h ie xkΩ BL 30 10 BL GR GR Y O h oe xµ Y O 0.3 0.1 0.1 0.3 1 30 BL GR BL 10 Y O GR BL GR Y O O h re x10 -4 0.3 3 10 50 0.1 0.5 COLLECTOR CURRENT I C (mA) h oe xµ Y 1 GR h re x10 -4 O h fe 100 3 BL Y GR Y O h ie xkΩ 3 1 BL 300 h PARAMETER 100 COMMON EMITTER I C =2mA f=270Hz Ta=25 C 1k BL Ω h PARAMETER 300 5k 3k COMMON EMITTER VCE =12V, f=270Hz Ta=25 C Ω 5k 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR POWER DISSIPATION P C (mW) P C - Ta 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2001. 2. 24 Revision No : 2 3/3