SEMICONDUCTOR KTC9014 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. N ・Complementary to KTC9015. K E G J D MAXIMUM RATING (Ta=25℃) H UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Emitter Current IE -150 mA Junction Temperature Storage Temperature Range 1 2 3 TO-92 625 PC* Collector Power Dissipation F F C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N mW 400 Tj 150 ℃ Tstg -55～150 ℃ * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA 60 - 1000 - 0.1 0.25 V 60 - - MHz hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE Classification A:60～150, 2010. 3. 22 B:100～300, Revision No : 1 C:200～600, D:400～1000 1/1