SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES C A ・Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N ・Low Noise : NF=1dB(Typ.). at f=1kHz. K ・Complementary to KTA1266A. J H Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Collector Power Dissipation PC 400 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ 1 2 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M UNIT L RATING C F F SYMBOL Storage Temperature Range G D MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA VCE=6V, IC=2mA 70 - 700 hFE(2) VCE=6V, IC=150mA 25 100 - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V 80 - - MHz hFE(1) (Note) DC Current Gain fT Transition Frequency VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Base Intrinsic Resistance rbb' VCB=10V, IE=1mA, f=30MHz - 50 - Ω Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE(1) Classification O:70～140, 2010. 1. 28 Y:120～240, Revision No : 1 GR:200～400, BL:300~700 1/3 KTC3198A h FE - I C I C - VCE 3.0 2.0 160 1.0 120 0.5 80 I B=0.2mA 40 0 0 1 2 3 4 5 6 EMITTER 300 100 50 30 VCE =1V 10 0.1 7 0.3 1 3 1 0.1 Ta=100 C 25 C -25 C 30 100 300 10 COMMON EMITTER I C/I B =10 5 3 Ta=25 C 1 0.5 0.3 0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IE I B - V BE 3k 100 50 30 -0.3 -1 -3 -10 -30 -100 Revision No : 1 -300 300 100 30 10 5 C 25 C 1k 500 300 300 COMMON EMITTER VCE =6V 1k 0 C COMMON EMITTER VCE =-10V Ta=25 C Ta=1 0 3k EMITTER CURRENT I E (mA) 2010. 1. 28 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 0.5 0.3 10 -0.1 10 V BE(sat) - I C BASE CURRENT I B (µA) TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) V CE(sat) - I C 0.01 0.1 3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 0.05 0.03 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Ta=- 0 COMMON 500 Ta=2 200 1k COMMON EMITTER Ta=25 C 5.0 6.0 DC CURRENT GAIN h FE COLLECTOR CURRENT IC (mA) 240 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3198A h PARAMETER - I C 2k 300 GR 100 O BL 10 O Y GR h oe x µ Y O 3 BL 1 Y O 0.3 0.1 0.1 0.3 GR h re x 10 -4 1 COMMON EMITTER I C =2mA Ta=25 C f=270Hz BL Y O GR 100 BL GR h ie x kΩ 30 300 h fe Y Ω h PARAMETER COMMON EMITTER f=270Hz VCE =12V Ta=25 C BL h PARAMETER 1k h PARAMETER - VCE 2k 1k 30 BL 10 BL GR GR 3 Y 1 O 30 50 10 COLLECTOR CURRENT I C (mA) 0.1 0.5 h oe Y O BL GR Y h ie x kΩ -4 h re x 10 0.3 3 h fe 1 3 10 30 O 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 1 3/3