SEMICONDUCTOR 2N7000A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES B C ・High density cell design for low RDS(ON). A ・Voltage controolled small signal switch. ・Rugged and reliable. ・High saturation current capablity. N E K G J D MAXIMUM RATING (Ta=25℃) RATING UNIT H F Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS≤1㏁) VDGR 60 V Gate-Source Voltage VGSS ±20 V ID 200 IDP 500 Drain Power Dissipation PD 400 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Continuous Drain Current Pulsed Storage Temperature Range L F 1 2 C SYMBOL 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC DIM A B C D E F G H J K L M N 1. SOURCE 2. GATE 3. DRAIN mA TO-92 EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10μA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 μA Gate-Body Leakage, Forward IGSSF VGS=15V, VDS=0V - - 1 μA Gate-Body Leakage, Reverse IGSSR VGS=-15V, VDS=0V - - -1 μA 2009. 11. 17 Revision No : 3 1/4 2N7000A ELECTRICAL CHARACTERISTICS (Ta=25℃) ON CHARACTERISTICS (Note 1) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 0.8 2.1 3 V VGS=10V, ID=500mA - 1.2 5 VGS=4.5V, ID=75mA - 1.8 5.3 VGS=10V, ID=500mA - 0.6 2.5 VGS=4.5V, ID=75mA - 0.14 0.4 ID(ON) VGS=4.5V, VDS=10V 75 600 - mA Forward Transconductance gFS VDS=10V, ID=200mA 100 320 - mS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA - 0.76 1.15 V MIN. TYP. MAX. UNIT - 20 50 - 4 5 - 11 25 Vth Gate Threshold Voltage VDS=VGS, ID=1mA RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage On State Drain Current Ω V Note 1) Pulse Test : Pulse Width≦300㎲, Duty Cycle≦2.0% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=15V, RL=25Ω, ID=200mA, - - 10 Turn-Off Time toff VGS=10V, RGEN=25Ω - - 10 tr t d(off) Switching Time pF nS SWITCHING TIME TEST CIRCUIT V DD t off t on t d(on) RL V IN V OUT D OUTPUT, V OUT tf 90% 90% 10% 10% INVERTED V GS R GEN DUT G 90% INPUT, V IN 50% 50% 10% S 2009. 11. 17 Revision No : 3 PULSE WIDTH 2/4 2N7000A I D - VDS DRAIN CURRENT ID (A) 9V V COMMON SOURCE 10 8V DRAIN SOURCE ON- RESISTANCE R DS(ON) (Ω) (NORMALIZED) 2.0 R DS(ON) - I D 7V Ta=25 C 1.5 6V 1.0 5V 4V 0.5 VGS =3V 0 0 1 2 3 4 3.0 2.5 4V 4.5V 5V 8V 9V 10V S= 1.5 VG 1.0 COMMON SOURCE Ta=25 C 0.5 5 0 0.4 0.8 VGS =10V I D =500mA 1.5 1.25 1.0 0.75 0.5 25 50 75 100 125 Ta=125 C 2.0 1.5 Ta=25 C 1.0 Ta=-55 C 0.5 0 0 0.4 0.8 1.2 1.6 I D - VGS Vth - T j C C 12 5 1.6 Ta =-5 5 C =2 5 Ta 0.8 0.4 0 2 4 6 8 GATE-SOURCE VOLTAGE VGS (V) 2009. 11. 17 2.5 DRAIN CURRENT I D (A) 1.2 2.0 COMMON SOURCE VGS =10V JUNCTION TEMPERATURE T j ( C) COMMON SOURCE VGS =10V 0 3.0 150 Revision No : 3 10 NORMALIZED GATE SOURCE THRESHOLD VOLTAGE Vth (V) 2.0 DRAIN CURRENT I D (A) DRAIN SOURCE ON- RESISTANCE R DS(ON) (Ω) (NORMALIZED) COMMON SOURCE 0 1.6 R DS(ON) - I D Ta = DRAIN SOURCE ON- RESISTANCE R DS(ON) (Ω) (NORMALIZED) R DS(ON) - T j -25 1.2 DRAIN CURRENT I D (A) 2.0 -50 7V 2.0 DRAIN-SOURCE VOLTAGE V DS (V) 1.75 6V 2.0 1.1 COMMON SOURCE VDS =V GS 1.05 I D =1mA 1.0 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 150 JUNCTION TEMPERATURE T j ( C) 3/4 2N7000A 30 C - V DS 100 COMMON SOURCE VGS =0 0.3 5 C Ta= 25 C 1 CAPACITANCE C (pF) 50 C 3 Ta=-5 10 Ta= 125 REVERSE DRAIN CURRENT I S (A) I S - V SD 0.1 30 C iss C oss 10 5 C rss COMMON SOURCE VGS =0 f=1MHz Ta=25 C 3 0.03 1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 3 10 30 50 DRAIN-SOURCE VOLTAGE V DS (V) BODY DIODE FORWARD VOLTAGE VSD (V) I D - V DS VGS - Q g 2 10 COMMON SOURCE VDS =25V I D =115mA 8 DRAIN CURRENT I D (A) GATE-SOURCE VOLTAGE VGS (V) 5 6 4 2 T 0.5 0.3 RD 0.4 0.8 1.2 1.6 2.0 N) 10m S 100 0.05 0.03 1s 10s SINGLE PULSE VGS =10V Ta=25 C 0.005 0 S(O I LIM 0.1 0.01 0 100µs 1m S 1 1 3 mS DC 5 10 30 50 100 DRAIN-SOURCE VOLTAGE V DS (V) GATE CHARGE Q g (nC) DRAIN POWER DISSIPATION PD (mW) P D - Ta 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2009. 11. 17 Revision No : 3 4/4