SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 Low ON-resistance +0.25 1.5-0.15 : Ron = 3.3 Ω (max) (@VGS = 4.5 V) 2.9±0.2 : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) +0.1 0.4-0.05 • 1.9 Small package 0.95 0.95 • 1 2 3 0.3 Rating Unit Drain-source voltage VDS 60 V Gate-source voltage VGSS ± 20 V ID 200 IDP 800 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Pulse 0~0.1 Symbol +0.2 1.1-0.1 Characteristics +0.1 0.16-0.06 Maximum Ratings (Ta = 25°C) 1.Gate 2.Source 3.Drain mA S-MINI JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Symbol Min Typ Max Unit VGS = ± 20 V, VDS = 0 ⎯ ⎯ ± 10 µA V (BR) DSS ID = 0.1 mA, VGS = 0 60 ⎯ ⎯ V IDSS VDS = 60 V, VGS = 0 ⎯ ⎯ 1 µA IGSS Vth VDS = 10 V, ID = 0.25 mA 1.0 ⎯ 2.5 V ⎪Yfs⎪ VDS = 10 V, ID = 200 mA 170 ⎯ ⎯ mS ID = 500 mA, VGS = 10 V ⎯ 2.0 3.0 ID = 100 mA, VGS = 5 V ⎯ 2.1 3.2 ID = 100 mA, VGS = 4.5 V ⎯ 2.2 3.3 ⎯ 17 ⎯ pF ⎯ 1.4 ⎯ pF pF RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss VDS = 25 V, VGS = 0, f = 1 MHz Coss ⎯ 5.8 ⎯ Turn-on delay time td(on) ⎯ 2.4 4.0 Turn-off delay time td(off) ⎯ 26 40 Output capacitance Switching time Test Condition VDD = 30 V , ID = 200 mA , VGS = 0 to 10 V 1 Ω ns 2005-11-03 SSM3K7002F Switching Time Test Circuit (a) Test circuit OUT 10 V (b) VIN 90 % IN 50 Ω 10 V 0 10 µs VDD = 30 V < 1% Duty = VIN: tr, tf < 2 ns (Zout = 50 Ω) Common Source Ta = 25 °C Marking 10 % 0V RL VDD (c) VOUT VDD 10 % 90 % VDS (ON) tr tf td(on) td(off) Equivalent Circuit (top view) 3 3 NC 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 0.25 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. The recommended VGS voltage for turning on this product is 4.5 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2005-11-03 SSM3K7002F ID - VDS ID - VGS 1000 1000 Common Source Ta = 25 °C 900 100 7 700 10 600 3.3 500 3.0 400 2.7 300 2.5 200 100 25 °C 1 - 25 °C 0.1 0.01 0 0.5 1 1.5 Drain-Source Voltage VDS (V) 2 0 RDS(ON) - ID 5 Common Source Ta = 25 °C 4 3 VGS = 4.5 V 1 5.0 V 2 10 V 1 0 2 3 Gate-Source Voltage VGS (V) 4 5 RDS(ON) - VGS 5 D ra in -S o u rce O N -R e sista n ce R D S (O N ) (Ω ) D ra in -S o u rce O N -R e sista n ce R D S (O N ) (Ω ) Ta = 100 °C 10 VGS = 2.3 V 0 Common Source ID = 100 mA 4 Ta = 100 °C 3 25 °C 2 - 25 °C 1 0 10 100 Drain Current ID (mA) 1000 0 2 RDS(ON) - Ta 5 4 6 Gate-Source Voltage VGS (V) 8 10 Vth - Ta 2 Ga te Th re sh o ld V o lta g e V th (V ) Common Source D ra in -S o u rce O N -R e sista n ce R D S (O N ) (Ω ) Common Source VDS = 10 V 4.5 4.0 D ra in C u rre n t ID (m A ) D ra in C u rre n t ID (m A ) 800 5 4 VGS = 4.5 V , ID = 100 mA 3 2 5.0 V , 100 mA 10 V , 500 mA 1 0 Common Source ID = 0.25 mA VDS = 10 V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 Ambient Temperature Ta (°C) 125 150 -25 3 0 25 50 75 100 Ambient Temperature Ta (°C) 125 150 2005-11-03 SSM3K7002F |Yfs| - ID IDR - VDS 1000 Common source VDS = 10 V Ta = 25 °C D ra in R e ve rse C u rre n t ID R (m A ) Fo rw a rd Tra n sfe r A d m itta n ce |Y fs| (m S ) 1000 100 10 800 700 D 600 G IDR 500 400 S 300 200 100 0 10 100 Drain Current ID (mA) 1000 0 C - VDS -0.2 -0.4 -0.6 -0.8 -1 Drain-Source Voltage VDS (V) Common Source VGS = 0 V f = 1 MHz Ta = 25 °C Ciss 10 Coss -1.2 -1.4 t - ID 10000 S w itch in g Tim e t (n s) 100 C a p a cita n ce C (p F) Common Source VGS = 0 V Ta = 25 °C 900 Common Source VDD = 30 V VGS = 0 to 10 V Ta = 25 °C tf 1000 100 td(off) 10 td(on) tr Crss 1 1 0.1 1 10 Drain-Source Voltage VDS (V) 1 100 10 100 Drain Current ID (mA) 1000 PD - Ta D ra in P o w e r D issip a tio n P D (m W ) 250 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature Ta (°C) 140 160 4 2005-11-03 SSM3K7002F 5 2005-11-03