ETC 2SK2660

Power F-MOS FETs
2SK2660
Silicon N-Channel Power F-MOS FET
■ Features
unit: mm
● High-speed switching
● High drain-source voltage
6.5±0.1
5.3±0.1
4.35±0.1
2.3±0.1
0.5±0.1
Symbol
Ratings
Unit
Drain to Source breakdown voltage
VDSS
200
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±4
A
Pulse
IDP
±8
A
Drain current
Allowable power
dissipation
TC = 25°C
Ta = 25°C
10
PD
1
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.5±0.1
0.75±0.1
2.3±0.1
4.6±0.1
W
Channel temperature
1.0±0.1
0.1±0.05
0.93±0.1
0.8max
Parameter
2.5±0.1
■ Absolute Maximum Ratings (TC = 25°C)
1.0±0.2
7.3±0.1
● High-speed switching
1.8±0.1
■ Applications
1
2
1: Gate
2: Drain
3: Source
U Type Package
3
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 160V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 2A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 2A, f = 1MHz
200
V
1
0.8
V
1.1
Ω
1
S
290
pF
50
pF
Reverse transfer capacitance (Common Source) Crss
9
pF
Turn-on time (delay time)
td(on)
10
ns
Rise time
tr
VGS = 10V, ID = 2A
25
ns
Turn-off time (delay time)
td(off)
RL = 50Ω, VDD = 100V
45
ns
Fall time
tf
40
ns
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
0.5
5
1
Power F-MOS FETs
2SK2660
PD  Ta
Area of safe operation (ASO)
100
20
Allowable power dissipation PD (W)
10
IDP
3
t=1ms
ID
1
10ms
100ms
0.3
DC
0.1
0.03
0.01
(1) TC=Ta
(2) Without heat sink
(PD=1.3W)
(1)
30
Avalanche energy capacity EAS (mJ)
40
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
EAS  Tj
20
10
(2)
16
12
8
4
0
25
0
1
3
10
30
100
300
1000
40
0
Drain to source voltage VDS (V)
80
120
160
Ambient temperature Ta (˚C)
ID  VDS
50
75
ID  VDS
5
100
125
5
TC=25˚C
TC=25˚C
VGS=10.0V
VDS=25V
TC=25˚C
6.5V
7.0V
6.0V
3
5.5V
2
10W
5.0V
1
4
6.0V
3
5.5V
2
5.0V
2
1
4.5V
0
0
0
4
8
12
16
20
24
0
0
Drain to source voltage VDS (V)
4
8
12
16
20
TC=100˚C
2
25˚C
0˚C
1
0
VDS=25V
TC=25˚C
4
2
3
4
5
Drain current ID (A)
6
8
10
12
f=1MHz
TC=25˚C
1000
3
2
1
0
1
6
10000
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
3
Forward transfer admittance |Yfs| (S)
4
4
Ciss, Coss, Crss  VDS
5
VGS=10V
2
Gate to source voltage VGS (V)
| Yfs |  ID
5
0
0
Drain to source voltage VDS (V)
RDS(on)  ID
Drain to source ON-resistance RDS(on) (Ω)
3
1
4.5V
2
Drain current ID (A)
Drain current ID (A)
Drain current ID (A)
4
VGS=10.0V
175
ID  VGS
5
4
150
Junction temperature Tj (˚C)
0
1
2
3
4
5
Drain current ID (A)
6
Ciss
100
Coss
Crss
10
1
0
100
200
300
400
Drain to source voltage VDS (V)