DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING (Unit: mm) FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 4.0±0.25 V V V A A A A W °C °C 1.5±0.1 2.5±0.1 Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) IC(DC) −5.0 Note1 Collector Current (pulse) IC(pulse) −8.0 Base Current (DC) IB(DC) −0.2 Note1 Base Current (pulse) IB(pulse) −0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 16 cm x 0.7 mm 0.8 MIN. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) 0.42 ±0.06 0.41 +0.03 –0.05 E: Emitter C: Collector (Fin) B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = −50 V, IE = 0 −100 nA Emitter Cut-off Current IEBO VEB = −6.0 V, IC = 0 −100 nA hFE1 VCE = −1.0 V, IC = −1.0 A 80 hFE2 VCE = −1.0 V, IC = −2.0 A 100 200 400 − VBE VCE = −1.0 V, IC = −0.1 A −0.6 −0.665 −0.7 V VCE(sat)1 IC = −3.0 A, IB = −0.15 A −0.17 −0.35 V VCE(sat)2 IC = −5.0 A, IB = −0.25 A −0.28 −0.55 V VBE(sat) IC = −3.0 A, IB = −0.15 A −0.89 −1.2 V fT VCE = −10 V, IE = 0.5 A 150 MHz DC Current Gain Note Base to Emitter Voltage Note Collector Saturation Voltage Collector Saturation Voltage Base Saturation Voltage Note Note Note Gain Bandwidth Product − Output Capacitance Cob VCB = −10 V, IE = 0, f = 1.0 MHz 100 pF Turn-on Time ton IC = −2.0 A, VCC = −10 V, 265 ns Storage Time tstg RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, 350 ns 50 ns Fall Time tf Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSFICATION Marking HX HY HZ hFE2 100 to 200 160 to 320 200 to 400 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15930EJ2V0DS00 (2nd edition) Date Published December 2001 NS CP(K) Printed in Japan © 2001 2SB1571 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA −10 −5 80 IC - Collector Current - A 60 40 20 120 −0.1 −0.05 A −10 −5 IB = −10 IC - Collector Current - A IC - Collector Current - A −5 0 m A A 0m m −4 −30 0 mA −2 −3 mA −2 −1 0 −0.2 −0.4 −0.6 −0.8 −1.0 −0.2 −0.1 −0.05 −0.002 −0.001 −200 VCE(sat) - Collector Saturation Voltage - mV hFE - DC Current Gain 50 VCE = 1 V TA = 125˚C 75˚C 25˚C 0˚C −25˚C 20 10 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −100 −5 VCE = 1 V −400 −600 −800 −1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT −10 −1000 −500 −200 −100 IC = 20 . IB TA = 125˚C 75˚C 25˚C −50 −20 0˚C −25˚C −10 −5 −2 −1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 IC - Collector Current - A IC - Collector Current - A 2 −50 VBE - Base to Emitter Voltage - mV 500 100 −20 −0.02 −0.01 −0.005 DC CURRENT GAIN vs. COLLECTOR CURRENT 200 −10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE −2 −1 −0.5 VCE - Collector to Emitter Voltage - V 1000 s DC VCE - Collector to Emitter Voltage - V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −4 0m −0.2 TA - Ambient Temperature - ˚C −5 s s 10 −0.5 −0.02 TA = 25˚C Single Pulse −0.01 −1 −2 −5 150 m m ˚C 90 −1 1 –25 60 10 = 25˚ C 75˚ C 25 ˚C 0˚C 30 −2 =1 0 PW TA dT - Percentage of Rated Power - % 100 Data Sheet D15930EJ2V0DS −5 −10 2SB1571 −1000 −500 −200 −100 BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT −10 IC = 50 . IB VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - mV COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT TA = 125˚C 75˚C 25˚C −50 0˚C −25˚C −20 −10 −5 −2 −1 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 IC = 20 . IB −5 −1 −0.5 −0.2 −0.1 −0.01 −0.02 −0.05 −0.1 −0.2 IC - Collector Current - A Cob - Outpur Capacitance - pF fT - Gain Bandwidth Product - MHz 1000 500 200 100 50 20 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −2 −5 −10 OUTPUT CAPACITANCE vs. REVERSE VOLTAGE VCE = −10 V 10 −1 IC - Collector Current - A GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000 −0.5 −5 −10 f = 1.0 MHz 500 200 100 50 20 10 −0.1 −0.2 −0.5 −1 IE - Emitter Current - A −2 −5 −10 −20 −50 −100 VCB - Collector to Base Voltage - V SWITCHING CHARACTERISTICS VCC = −10 V IC = 20 . IB IB1 = −IB2 ton - Turn-On Time - µs tstg - Storage Time - µs tf - Fall Time - µs 2 1 ton 0.5 tstg 0.2 0.1 0.05 tf −0.1 −0.2 −0.5 −1 −2 −5 −10 IC - Collector Current - A Data Sheet D15930EJ2V0DS 3 2SB1571 • The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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