Diodes SMD Type Silicon Schottky Barrier Diode HSB88WA Features Low reverse current, Low capacitance. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it R e v e rs e v o lta g e P a ra m e te r VR 10 V A v e ra g e re c tifie d c u rre n t IO 15 mA J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Reverse current IR Capacitance Conditions Min IF =1 mA 0.35 Typ 0.42 Max IF =10 mA 0.50 0.58 V R =2 V 0.2 V R =10 V 10 Unit V A C V R = 0 V, f = 1 MHz 0.80 pF Capacitance deviation ÄC V R = 0V, f = 1 MHz 0.10 pF Forward voltage deviation ÄV F IF = 10 mA 10 mV C=200 pF, R= 0 ESD-Capability (Note 1) Both forward and 30 V reverse direction 1 pulse. Note 1. Failure criterion ; IR 0.4 A at V R =2 V Marking Marking C7 www.kexin.com.cn 1