DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS (Unit: mm) Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. 2.1±0.1 2 1 Peak Reverse Voltage VRM 75 V DC Reverse Voltage VR 50 V 0.3+0.1 −0 Maximum Voltages and Currents (TA = 25°C) 0.3+0.1 −0 2.0±0.2 ABSOLUTE MAXIMUM RATINGS 0.65 1.25±0.1 0.65 • • • • IFSM 6.0 A Marking IFSM 4.0 A IFM 450 mA IFM 300 mA IO 150 mA IO 100 mA Tj 150 °C Tstg –55 to + 150 °C Rth(j-a) 1.0 °C/mW Rth(j-a) 0.85 °C/mW Peak Forward Current Average Rectified Current Note Average Rectified Current Maximum Temperatures 0.15+0.1 −0.05 0 to 0.1 Peak Forward Current Note 0.3 Surge Current (1 µs) 0.9±0.1 Surge Current (1 µs) Note 3 CONNECTION DIAGRAM (Top View) Junction Temperature Storage Temperature Range 2 Thermal Resistance Junction to Ambient 3 Note Junction to Ambient Note Both diodes loaded simultaneously. 1. Cathode 2. Cathode 3. Anode 1 Marking : A4 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Forward Voltage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VF1 IF = 10 mA 0.72 1.0 V VF2 IF = 50 mA 0.88 1.1 V VF3 IF = 100 mA 1.0 1.2 V 0.1 µA 4.0 pF 4.0 ns Reverse Current IR VR = 50 V Capacitance Ct VR = 0 V, f = 1.0 MHz Reverse Recovery Time trr See Test Circuit. 2.5 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16308EJ2V0DS00 (2nd edition) (Previous No. DC-2100) Date Published July 2002 NS CP(K) Printed in Japan © 1987 1SS303 TYPICAL ELECTRICAL CURVES (TA = 25°C) REVERSE CURRENT vs. REVERSE VOLTAGE 100 100 50 50 20 20 IR - Reverse Current - µA IF - Forward Current - mA FORWARD CURRENT vs. FORWARD VOLTAGE 10 5 2 1 10 5 2 1 0.5 0.5 0.2 0.1 0.2 0 0 0.2 0.4 0.6 0.8 1.0 10 1.2 20 30 40 50 VR - Reverse Voltage - V VF - Forward Voltage - V REVERSE RECOVERY TIME vs. FORWARD CURRENT TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 20 20 trr - Reverse Recovery Time - ns Ct - Terminal Capacitance - pF 10 5 2 1 0.5 16 12 8 4 0.2 0.1 0.5 2 1 2 5 10 20 50 VR - Reverse Voltage - V 100 0 Data Sheet D16308EJ2V0DS 20 40 60 80 IF - Forward Current - mA 100 1SS303 REVERSE RECOVERY TIME (trr) TEST CIRCUIT Pulse Generator (50 Ω) DC Source 0.02 µF D.U.T. Sampling Oscilloscope (50 Ω) 0 VF 0 IF VR 0.1• Ir Ir + 3 kΩ − Output Current Waveform in Diode Input Voltage Waveform to Diode Trigger IF = 10 mA, VR = 6.0 V, RL = 100 Ω irr = 0.1• Ir Data Sheet D16308EJ2V0DS trr 3 1SS303 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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