Transistors SMD Type Silicon PNP Epitaxial 2SA1587 Features High voltage VCEO=-120V High hFE hFE=200 to 700 Low noise Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Emitter-base voltage VEBO -120 V Collector-emitter voltage VCEO -5 V Collector current IC -100 mA Base current IB -20 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -120 V, IE = 0 -0.1 ìA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 ìA DC current gain hFE VCE = -6 V, IC = -2 mA VCE (sat) IC = -10 mA, IB = -1 mA Collector-emitter saturation voltage Transition frequency fT VCE = -6 V, IE = 1 mA Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz Noise figure NF VCE=-6 V, IC=-0.1 mA, f=1 kHz,Rg =10KÙ 200 700 0.3 V 100 MHz 4 pF 1.0 10 dB hFE Classification Marking CG CL Rank GR BL hFE 200 400 350 700 www.kexin.com.cn 1