Transistors IC SMD Type Silicon PNP Epitaxial 2SA1313 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Small package 1 0.55 High voltage: VCEO = -50 V (min) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -500 mA Collector current Base current IB -50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -0.1 ìA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 ìA DC current gain hFE VCE = -1 V, IC = -100 mA VCE (sat) IC = -100 mA, IB = -10 mA 70 240 -0.1 -0.25 V Base-emitter voltage VBE VCE = -1 V, IC = -100 mA -0.8 -1 V Transition frequency fT VCE = -6 V, IC = -20 mA 200 MHz VCB = -6 V, IE = 0, f = 1 MHz 13 pF Collector-emitter saturation voltage Collector output capacitance Cob hFE Classification AC Marking Rank hFE O 70 140 Y 120 240 www.kexin.com.cn 1