Transistors SMD Type Medium Power Transistor 2SC5053 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -1 A IC (Pulse) *1 -2 A PC 0.5 W W Collector power dissipation 2 PC * 2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. Single pulse, Pw=100ms, duty=1/2. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=-50ìA -60 V Collector-emitter voltage BVCEO IC=-1mA -50 V Emitter-base voltage -5 BVEBO IE=-50ìA Collector cutoff current ICBO VCB=-40V -0.1 ìA Emitter cutoff current IEBO VEB=-4V -0.5 ìA -0.4 V Collector-emitter saturation voltage Forward current transfer ratio V VCE(sat) IC=-500mA,IB=-50mA hFE Transition frequency fT Output capacitance Cob VCE=-3V,IC=-0.5A 120 270 VCE=-5V, IE= 50mA, f=100MHz 150 MHz VCB=-10V, IE=0A, f=1MHz 20 pF hFE Classification Marking CG Rank QR www.kexin.com.cn 1