Transistors SMD Type Medium Power Transistor 2SD2537 Features High DC current gain. High emitter-base voltage. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 12 V Collector current IC 1.2 A Collector power dissipation PC 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=10ìA 30 V Collector-emitter breakdown voltage BVCEO IC=1mA 25 V Emitter-base breakdown voltage BVEBO IE=10ìA 12 V ICBO VCB=30V 0.3 ìA IEBO VEB=12V 0.3 ìA 0.3 V Collector cutoff current Emitter cutoff current VCE(sat) IC=500mA, IB=10mA Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=5V, IC=0.5A 820 2700 VCE=10V, IE= -50mA, f=100MHz 200 MHz VCB=10V, IE=0A, f=1MHz 20 pF hFE Classification DV Marking Rank V W hFE 820 1800 1200 2700 www.kexin.com.cn 1