KEXIN 2SD1758

Transistors
SMD Type
Medium Power Transistor
2SD1758
TO-252
Unit: mm
Features
6.50
+0.2
5.30-0.2
Low VCE(sat), VCE(sat) = 0.5V
+0.15
1.50 -0.15
+0.15
-0.15
2.30
+0.1
-0.1
+0.8
0.50-0.7
(IC = 2A, IB = 0.2A).
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.2
9.70 -0.2
NPN silicon transistor
+0.15
0.50 -0.15
Epitaxial planar type
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Collector current (pulse) *
ICP
2.5
A
Collector power dissipation
PC
Tc = 25
1
W
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pw=20ms.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
BVCBO
IC=50ìA
40
V
Collector-emitter voltage
BVCEO
IC=1mA
32
V
Emitter-base voltage
BVEBO
IE=50ìA
5
V
Collector cutoff current
ICBO
VCB=20V
1
ìA
Emitter cutoff current
IEBO
VEB=4V
1
ìA
Forward current transfer ratio
hFE
VCE=3V,IC=0.5A
VCE(sat) IC=2A,IB=0.2A
Collector-emitter saturation voltage
Transition frequency
fT
Output capacitance
Cob
82
390
0.5
0.8
V
VCE=5V, IE= -500mA, f=100MHz
100
MHz
VCB=10V, IE=0A, f=1MHz
30
pF
hFE Classification
Rank
P
Q
R
hFE
82 180
120 270
180 390
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