Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A W Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 80 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 80 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Collector-base cutoff current ICBO VCB = 40 V, IB = 0 Forward current transfer ratio hFE VCE = 2 V, IC = 100 mA 0.1 120 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.15 0.3 Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 Transition frequency fT Collector output capacitance Cob ìA 340 VCB = 10 V, IE = -50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 10 V V MHz 20 pF hFE Classification 2A Marking Rank R S hFE 120 240 170 340 www.kexin.com.cn 1