Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB709A Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High forward current transfer ratio hFE. +0.1 1.3-0.1 +0.1 2.4-0.1 automatic insertion through the tape packing and the magazine 0.4 3 Mini type package, allowing downsizing of the equipment and 1 0.55 packing. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -7 V Collector current IC -100 mA Peak collector current ICP -200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -45 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -45 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -7 V Collector-base current ICBO VCB = -20 V, IE = 0 A -0.1 ìA Collector-emitter current ICEO VCE = -10 V, IB = 0 A -100 ìA hFE VCE = -10 V, IC = -2 mA Forward current transfer ratio VCE(sat) IC = -100 mA, IB = -10 mA Collector to emitter saturation voltage Transition frequency fT Collector output capacitance Cob 160 460 -0.3 -0.5 V VCB = -10 V, IE = 1 mA , f = 200 MHz 80 MHz VCB = -10V , IE = 0 , f = 1.0MHz 2.7 pF hFE Classification Marking BQ BR BS hFE 160 260 210 340 290 460 www.kexin.com.cn 1