Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB767 Features Large collector power dissipation PC High collector-emitter voltage (Base open) VCEO Mini type package, allowing downsizing of the equipment and automatic Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICP -0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit -0.1 ìA Collector-base cutoff current ICBO VCB = -20 V, IE = 0 Collector-base voltage VCBO IC = -10ìA, IE = 0 -80 V Collector-emitter voltage VCEO IC = -100ìA, IB = 0 -80 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V VCE = -10 V, IC = -150 mA 90 Forward current transfer ratio hFE 220 Collector-emitter saturation voltage VCE(sat) IC = -300 mA, IB = -30 mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC = -300 mA, IB = -30 mA 0.85 -1.2 V Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA, f = 200 MHz 120 VCB = -10 V, IE = 0, f = 1 MHz 20 MHz 30 pF hFE Classification Marking CQ CR hFE 90 155 130 220 www.kexin.com.cn 1