Transistors IC SMD Type Silicon NPN Epitaxial Planer Type 2SD601A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 0.55 Low collector to emitter saturation voltage VCE(sat). +0.1 1.3-0.1 +0.1 2.4-0.1 High foward current transfer ratio hFE. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 20 ìA, IE = 0 60 V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 50 V 7 Emitter-base voltage VEBO IE = 10 ìA, IC = 0 Collector-base current ICBO VCB = 20 V, IE = 0 A 0.1 ìA Collector-emitter current ICEO VCE = 10 V, IB = 0 A 100 ìA hFE VCE = 10 V, IC = 2 mA Forward current transfer ratio VCE(sat) IC = 100 mA, IB = 10 mA Collector to emitter saturation voltage Transition frequency Noise voltage 160 460 0.1 0.3 V VCB = 10 V, IE = -2 mA , f = 200 MHz 150 MHz Cob VCB = 10V , IE = 0 , f = 1.0MHz 3.5 pF NV VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kW, Function = FLAT 110 mV fT Collector output capacitance V hFE Classification Marking ZQ ZR ZS hFE 160 260 210 340 290 460 www.kexin.com.cn 1