KEXIN KMBT3906

Transistors
SMD Type
PNP Transistors
KMBT3906(MMBT3906)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
Epitaxial planar die construction
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector- Base Voltage
VCBO
-40
V
Collector - Emitter Voltage
VCEO
-40
V
Emitter - Base Voltage
VEBO
-5
V
IC
-0.2
A
PC
0.3
W
TJ, Tstg
-55 to 150
Collector Current- Continuous
Collector Dissipation
Junction and Storage Temperature
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector - base breakdown voltage
VCBO
Ic= -100 ìA
Collector - emitter breakdown voltage
VCEO
Ic= -1 mA
Emitter- base breakdown voltage
VEBO
IE= -100 ìA
Collector cut-off current
IcBO
VCB= -40 V , IE=0
Collector cut-off current
IcEO
Emitter cut-off current
IEBO
DC current gain
hFE
IE=0
IB=0
IC=0
Min
Typ
Max
Unit
-40
V
-40
V
-5
V
-0.1
A
VCE= -40 V , VBE(off)=-3V
-50
nA
VEB= -5V , IC=0
-0.1
A
VCE= -1V, IC= -10mA
100
VCE= -1V, IC= -50mA
60
300
Collector- emitter saturation voltage
VCE(sat) IC=-50 mA, IB= -5mA
-0.3
V
Base - emitter saturation voltage
VBE(sat) IC=-50 mA, IB= -5mA
-0.95
V
Delay time
td
VCC=-3.0V,VBE=0.5V
35
Rise time
tr
IC=-10mA,IB1=-1.0mA
35
Storage time
ts
VCC=-3.0V,IC=-10mA
225
Fall time
tf
IB1=IB2=-1.0mA
75
Transition frequency
fT
VCE= -20V, IC= -10mA, f=100MHz
250
ns
ns
MHz
Marking
Marking
2A
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Transistors
SMD Type
KMBT3906(MMBT3906)
Typical Characteristics
Fig.1 Max Power Dissipation vs
Ambient Temperature
Fig.3 Typical DC Current Gain vs
Collector Current
Fig.2 Input and Output Capacitance vs.
Collector-Base Voltage
Fig.4 Typical Collector-Emitter Saturation Voltage vs.
Collector Current
Fig.5 Typical Base-Emitter Saturation Voltage vs.
Collector Current
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