Product specification KMBT3906(MMBT3906) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Epitaxial planar die construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V IC -0.2 A PC 0.3 W TJ, Tstg -55 to 150 Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector - base breakdown voltage VCBO Ic= -100 ìA Collector - emitter breakdown voltage VCEO Ic= -1 mA Emitter- base breakdown voltage VEBO IE= -100 ìA Collector cut-off current IcBO VCB= -40 V , IE=0 Collector cut-off current IcEO Emitter cut-off current IEBO DC current gain hFE IE=0 IB=0 IC=0 Min Typ Max Unit -40 V -40 V -5 V -0.1 A VCE= -40 V , VBE(off)=-3V -50 nA VEB= -5V , IC=0 -0.1 A VCE= -1V, IC= -10mA 100 VCE= -1V, IC= -50mA 60 300 Collector- emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.3 V Base - emitter saturation voltage VBE(sat) IC=-50 mA, IB= -5mA -0.95 V Delay time td VCC=-3.0V,VBE=0.5V 35 Rise time tr IC=-10mA,IB1=-1.0mA 35 Storage time ts VCC=-3.0V,IC=-10mA 225 Fall time tf IB1=IB2=-1.0mA 75 Transition frequency fT VCE= -20V, IC= -10mA, f=100MHz 250 ns ns MHz Marking Marking 2A http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification KMBT3906(MMBT3906) Typical Characteristics Fig.2 Input and Output Capacitance vs. Fig.1 Max Power Dissipation vs Collector-Base Voltage Ambient Temperature Fig.3 Typical DC Current Gain vs Collector Current Fig.4 Typical Collector-Emitter Saturation Voltage vs. Collector Current Fig.5 Typical Base-Emitter Saturation Voltage vs. Collector Current http://www.twtysemi.com [email protected] 4008-318-123 2 of 2