MJD41C - Weitron

MJD41C
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
2.COLLECTOR
3.EMITTER
Features:
* Designed for general purpose amplifier and low speed
switching applications.
* Monolithic Construction With Built–in Base–Emitter Resistors.
1
2
3
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA=25˚C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
6.0
A
Collector Power Dissipation
PD
1.25
W
Junction Temperature
Tj
+150
˚C
Tstg
-65 to +150
˚C
Storage Temperature Range
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MJD41C
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
BVCBO
100
-
-
V
BVCEO
100
-
-
V
BVEBO
5.0
-
-
V
ICEO
-
-
50
µA
IEBO
-
-
0.5
mA
hFE(1)
hFE(2)
30
15
-
75
-
VCE(sat)
-
-
1.5
V
Base-Emitter Voltage
VCE=4V, IC=6A
VBE
-
-
2
V
Transition frequency
VCE=10V, IC =0.5A, f=1MHz
fT
3
-
-
MHz
Collector-Base Breakdown Voltage
IC=0.1mA
Collector-Emitter Breakdown Voltage
IC=30mA
Emitter-Base Breakdown Voltage
IE=0.1mA
VCB=60V
VEB =5.0V
ON CHARACTERISTICS
DC Current Gain
VCE=4V, IC=0.3A
VCE=4V, IC=3A
Collector-Emitter Saturation Voltage
IC =6A, IB =0.6A
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MJD41C
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Typical Characteristics
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MJD41C
TO-252 Outline Dimensions
unit:mm
TO-252
E
A
G
4
H
Dim
A
B
C
D
E
G
H
J
K
L
M
J
1
2
3
B
M
K
D
C
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L
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Min
6.40
9.00
0.50
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
19-Nov-09