White Light Emitting Diode(InGaN) KLC-50WC Unit : [mm] DIMENSIONS KLC-50W is a high bright InGaN white LED whitout using phorsphor. Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package • Single Chip White LED without Phospor 1 2 1 Applications • Display • Indicator • Key Pad Back Light 2 Maximum Ratings [ Ta=25°C ] Parameter Symbol Ratings Unit VR 5 V IF 25 mA IFP 60 mA PD 65 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C Reverse Voltage Forward current Pulse forward current *1 Power dissipation Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Color Coordinate Half angle [ Ta=25°C ] Symbol VF Conditions IF = 20 mA Min - Typ 3.3 Max 3.5 Unit V IR VR = 5 V - - 10 uA Iv IF = 20 mA - 230 - mcd - 0.30 - nm - 0.34 - nm - 180 - deg. x y 2∆Θ1/2 IF = 20 mA IF = 20 mA 1/2 White Light Emitting Diode(InGaN) KLC-50WC Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 50 1 Relative intensity Forward current IF(mA) 40 30 20 0.5 10 0 0 0 20 40 60 80 100 5 0 Ambient temperature Ta 15 20 25 (IF) 35 30 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1.2 10 1 Intensity [arb.] Relative radiant intensity PO 10 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 100 (℃) 0 350 450 Ambient temperature Ta 550 650 750 Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) +6 0 + 40 -20 -4 0 50 -80 -100 + 80 10 0 0 25 20 15 +20 -6 5 0 0 0 +1 00 Forward current IF 30 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Forward voltage VF 50 50 Relative intensity(%) 2/2 100