Light Emitting Diode(InGaN) KLL-3EB Unit : [mm] DIMENSIONS KLL-3EB is a high bright InGaN blue LED, and has the optimized optical characteristics. Features • Transparent epoxy lens • High Optical Output Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse voltage Symbol VR Ratings 5 Unit V IF 30 mA IFP 0.1 A PD 105 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Conditions IF = 20 mA Reverse current IR VR = 5 V Luminous Intensity Iv IF = 20 mA Peak emission wavelength λP IF = 20 mA Doninant Wave Length λd Spectral half bandwidth Half angle Typ 3.2 Max 3.6 - - 10 uA 145 300 - mcd - 455 - nm IF = 20 mA 450 - 460 nm ∆λ IF = 20 mA - 25 - nm 2∆Θ1/2 IF = 20 mA - 110/50 - deg. 1/2 Min 2.9 Unit V Light Emitting Diode(InGaN) KLL-3EB Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 2.0 40 Relative intensity Forward current IF[mA] 50 30 20 10 0 0 20 40 60 80 1.0 0.5 0 100 0 3 5 10 15 20 25 30 Forward current IF[mA] Ambient temperature Ta [℃] Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 6 10 5 Intensity [arb.] Relative radiant intensity PO 1 1 0.1 4 3 2 1 -20 0 20 40 60 80 100 0 350 Ambient temperature Ta [℃] 400 450 500 Wave Length[nm] Forward current IF[mA] Forward current vs. Forward voltage 40 35 30 25 20 15 10 5 0 0 Radiant Pattern Angle(deg) 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] Relative intensity(%) 2/2 550