Light Emitting Diode(InGaN) KLB-520 B Unit : [mm] DIMENSIONS KLB-520 B is a high bright InGaN blue LED, and has the optimized optical characteristics. Features • Transparent epoxy lens • High Optical Output Applications • Display • Indicator • Signage • Camera [ Ta=25°C ] Maximum Ratings Parameter Reverse voltage Symbol VR Ratings 5 Unit V IF 30 mA IFP 0.5 A PD 105 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Conditions IF = 20 mA Min - Typ 3.2 Max 3.5 Unit V Reverse current IR VR = 5 V - - 50 uA Luminous Intensity Iv IF = 20 mA 3 5 - cd Peak emission wavelength λP IF = 20 mA - 455 - nm Doninant Wave Length λd IF = 20 mA 450 - 460 nm ∆λ IF = 20 mA - 15 - nm 2∆Θ1/2 IF = 20 mA - 8 - deg. Spectral half bandwidth Half angle 1/2 Light Emitting Diode(InGaN) KLB-520 B Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 2.0 40 30 20 10 0 1.0 Relative intensity Forward current IF[mA] 50 0 20 40 60 80 0.5 0 100 1 0 5 10 15 20 25 30 Forward current IF[mA] Ambient temperature Ta [℃] Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 6 10 5 Intensity [arb.] Relative radiant intensity PO 3 1 0.1 4 3 2 1 -20 0 20 40 60 80 100 0 350 Ambient temperature Ta [℃] 400 450 500 550 Wave Length[nm] Angle(deg) 0 +60 +4 + 20 0 -20 -4 0 50 0 + 80 -80 -100 0 +1 00 40 35 30 25 20 15 10 5 0 0 Radiant Pattern -6 Forward current IF[mA] Forward current vs. Forward voltage 100 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] 50 50 Relative intensity(%) 2/2 100