Light Emitting Diode(InGaN) KLC-50 B Unit : [mm] DIMENSIONS KLC-50 B is a high bright InGaN blue LED, and has the optimized optical characteristics. Features • Transparent epoxy lens • High Optical Output 1 2 1 Applications • Display • Indicator • Signage 2 [ Ta=25°C ] Maximum Ratings Parameter Reverse voltage Symbol VR Ratings 5 Unit V IF 30 mA IFP 0.5 A PD 105 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Conditions IF = 20 mA Min - Typ 3.2 Max 3.5 Unit V Reverse current IR VR = 5 V - - 10 uA Luminous Intensity Iv IF = 20 mA 90 120 150 mcd Doninant Wave Length λd IF = 20 mA 465 470 475 nm ∆λ IF = 20 mA - 25 - nm 2∆Θ1/2 IF = 20 mA - 180 - deg. Spectral half bandwidth Half angle 1/2 Light Emitting Diode(InGaN) KLC-50 B Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 40 Relative intensity Forward current IF[mA] 50 30 20 10 0 0 20 40 60 80 1 0.5 0 100 5 0 20 25 30 (IF) 35 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1.2 1 10 Intensity [arb.] 1 0.1 0.8 0.6 0.4 0.2 20 40 60 80 0 350 400 450 500 550 600 100 Ambient temperature Ta [℃] Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) +6 0 + 40 +20 0 -20 -4 0 -6 50 0 -80 -100 40 35 30 25 20 15 10 5 0 0 0 + 80 -20 0 +1 00 Relative radiant intensity PO 15 Forward current IF[mA] Ambient temperature Ta [℃] Forward current IF[mA] 10 100 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] 50 50 Relative intensity(%) 2/2 100