KODENSHI KLB-520G

Light Emitting Diode(InGaN)
KLB-520 G
Unit : [mm]
DIMENSIONS
KLB-520 G is a high bright InGaN Green LED,
and has the optimized optical characteristics.
Features
• Transparent epoxy lens
• High Optical Output
Applications
• Display
• Indicator
• Signage
• Camera
[ Ta=25°C ]
Maximum Ratings
Parameter
Reverse voltage
Symbol
VR
Ratings
5
Unit
V
IF
30
mA
IFP
0.5
A
PD
105
mW
Topr.
-30 ~ +85
°C
Tstg.
-40 ~ +100
°C
Tsol.
260
°C
Forward current
Pulse forward current
Power dissipation
*1
Operating temperature
Storage temperature
Soldering Temperature
*2
*1. IFP Measured under duty ≤ 1/10 @ 1KHz
*2. Soldering time ≤ 5 Sec
Keep the distance more than 3mm from soldering foundation.
Electro-Optical Characteristics
Parameter
Forward voltage
[ Ta=25°C ]
Conditions
IF = 20 mA
Min
-
Typ
3.2
Max
3.5
Unit
V
IR
VR = 5 V
-
-
50
uA
Luminous Intensity
Iv
IF = 20 mA
15
20
-
cd
Peak emission wavelength
λP
IF = 20 mA
-
520
-
nm
Doninant Wave Length
λd
IF = 20 mA
520
-
530
nm
Spectral half bandwidth
∆λ
IF = 20 mA
-
15
-
nm
2∆Θ1/2
IF = 20 mA
-
8
-
deg.
Reverse current
Half angle
Symbol
VF
1/2
Light Emitting Diode(InGaN)
KLB-520 G
Forward current vs.
Ambient temperature
Radiant Intensity vs.
Forward current
2.0
40
Relative intensity
Forward current IF[mA]
50
30
20
10
0
0
20
40
60
80
1.0
0.5
0
100
1
0
3
5 10 15 20 25 30
Forward current IF[mA]
Ambient temperature Ta [℃]
Relative intensity vs.
Wavelength
Relative radiant intensity vs.
Ambient temperature
1
1
0.1
0.8
0.6
0.4
0.2
20
40
60
80
0
400 450 500 550 600 650
100
Ambient temperature Ta [℃]
Wave Length[nm]
Forward current vs.
Forward voltage
Radiant Pattern
Angle(deg)
0
+60
+4
+20
0
-20
-4
0
-6
50
0
-80 -100
40
35
30
25
20
15
10
5
0
0
0
+ 80
-20
Forward current IF[mA]
Intensity [arb.]
10
0
+1 00
Relative radiant intensity PO
1.2
100
1.0 2.0 2.5 3.0 3.5 4.0
Forward voltage VF[V]
50
50
Relative intensity(%)
2/2
100