BAS125W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, 3 bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 2 1 BAS125W 1 3 BAS125-04W BAS125-05W BAS125-06W 3 3 3 1 2 1 2 EHA07005 EHA07002 1 VSO05561 2 EHA07006 EHA07004 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS125W 13s 1=A 2 n.c. 3=C SOT323 BAS125-04W 14s 1 = A1 2 = C2 3 = C1/A2 SOT323 BAS125-05W 15s 1 = A1 2 = A2 3 = C1/2 SOT323 BAS125-06W 16s 1 = C1 2 = C2 3 = A1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 25 Forward current IF 100 Surge forward current (t 100s) IFSM 500 Total power dissipation BAS125W, TS = 93 °C Ptot 250 mW BAS 125-04W...06W Junction temperature Ptot Tj 250 150 °C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 , TS = 84 °C Value Unit V mA Thermal Resistance Junction - soldering point1) RthJS K/W 230 265 BAS125W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics IR Reverse current nA VR = 20 V - - 100 VR = 25 V - - 150 VF Forward voltage mV IF = 1 mA - 385 400 IF = 10 mA - 530 650 IF = 35 mA - 800 950 CT - - 1.1 pF Rf - 16 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz 2 Nov-15-2001 BAS125W Forward current IF = f (TS ) BAS125W 100 mA 80 IF 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load BAS125W IFmax / I FDC = f (t p) BAS125W 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Nov-15-2001 BAS125W Forward current IF = f (TS ) BAS125-04W...06W ( IF per diode) 100 mA 80 IF 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load IFmax / IFDC = f (tp) BAS125-04W...06W BAS125-04W...06W 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-15-2001 BAS125W Forward current IF = f (VF ) Diode capacitance CT = f (VR) TA = Parameter f = 1MHz 10 2 ΙF BAS 125... EHD07115 1.0 CT mA BAS 125... EHD07117 pF 0.8 10 1 TA = -40C 25 C 85 C 150 C 10 0 0.6 0.4 10 -1 0.2 10 -2 0.0 0.5 V 0.0 1.0 10 0 VF Differential forward resistance rf = f (IF ) f = 10 kHz TA = Parameter ΙR BAS 125... EHD07116 10 4 rf TA = 125 C µA 20 VR Reverse current IR = f (VR ) 10 1 V 10 0 BAS 125... EHD07118 Ω 10 3 TA = 85 C 10 -1 10 2 10 -2 10 -3 10 1 TA = 25 C 0 10 V 10 0 10 -2 20 10 -1 10 0 10 1 mA 10 2 ΙF VR 5 Nov-15-2001