STM6960 SamHop Microelectronics Corp. Nov 12 2007 Ver1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS(ON) Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 60 @ VGS = 10V 60V 5A Surface Mount Package. 75 @ VGS = 4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V 5 4.3 A A IDM 25 A IS 1.7 A Parameter a Drain Current-Continuous @Ta -Pulsed 25 C ID 70 C b Drain-Source Diode Forward Current a Maximum Power Dissipation a 2 Ta= 25 C PD Ta=70 C Operating Junction and Storage Temperature Range TJ, TSTG 1.44 W -55 to 150 C 62.5 C /W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 STM6960 ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted) Parameter 5 Condition Symbol Min Typ C Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS 0V, ID 250uA Zero Gate Voltage Drain Current IDSS VDS Gate-Body Leakage IGSS VGS 60 V 1 uA 100 nA 1.8 3.0 V VGS 10V, ID 4.5A 47 60 m ohm VGS 4.5V, ID 3A 55 75 m ohm 48V, VGS 0V 20V, VDS 0V ON CHARACTERISTICS b Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) On-State Drain Current ID(ON) gFS Forward Transconductance VDS VGS, ID = 250uA VDS = 5V, VGS = 10V 1.0 20 A 12 S 700 PF 80 PF 50 PF 5 ohm 13 ns 10 ns 28 ns 7 ns VDS =48V, ID =4.5A,VGS =10V 15 nC VDS =48V, ID =4.5A,VGS =4.5V 7.5 nC 1.6 nC nC VDS 5V, ID 4.5A DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate resistance Rg SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ c tD(ON) t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 30V ID = 4.5 A VGS = 10V RGEN = 3 ohm VDS =48V, ID = 4.5 A VGS =10V 2 4.3 S T M6960 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.8 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 -55 C V G S =10V V G S =4V 9 V G S =3.5V 6 3 9 6 3 T j=125 C V G S =3V 0 0 0.5 1.5 1.0 2.0 2.5 0 0.0 3.0 V DS , Drain-to-S ource Voltage (V ) 1.6 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 90 R DS (ON) , On-R es is tance Normalized 2.0 75 R DS (on) (m W) 0.8 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics V G S =4.5V 60 45 V G S =10V 30 15 1 25 C 12 I D , Drain C urrent (A) 12 ID , Drain C urrent(A) 15 V G S =4.5V 1 3 6 9 12 1.8 1.4 1.2 V G S =4.5V I D =3A 1.0 0 15 V G S =10V I D =4.5A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 180 20.0 I D =4.5A Is , S ource-drain current (A) 150 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M6960 120 125 C 90 60 75 C 25 C 30 0 25 C 10.0 5.0 75 C 125 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.3 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6960 V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 6 800 C is s 600 400 200 C os s C rs s 0 0 10 V DS =48V I D =4.5A 8 6 4 2 0 5 10 15 20 25 0 30 2 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-to S ource Voltage (V ) F igure 10. G ate C harge F igure 9. C apacitance 50 100 60 I D , Drain C urrent (A) 600 S witching T ime (ns ) 6 4 Tr Tf 10 V DS =30V ,ID=4.5A 1 30 10 RD it 10 10 1 0m ms s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 60 100 300 600 6 10 ( L im 1s V G S =10 V 1 S ) ON 0.1 R g, G ate R es is tance ( W) 1 10 60 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6960 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 6 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M6960 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 D0 D1 E E1 E2 P0 P1 P2 T 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 8.0 4.0 2.0 ±0.05 0.3 ±0.05 K S G R V K0 SO-8 Reel UNIT:㎜ TAPE SIZE REEL SIZE M N W W1 H 12 ㎜ ψ330 330 ± 1 62 ±1.5 12.4 + 0.2 16.8 - 0.4 ψ12.75 + 0.15 7 2.0 ±0.15