BAT 240A Silicon Schottky Diode Preliminary data 3 • Rectifier Schottky diode for modem applications • High reverse voltage • For power supply • For clamping and protection in all 2 high voltage applications 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 240A 4Ms 1=C1/A2 2 = C2 Q62702-A1234 Package 3 = A1 SOT-23 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 240 V Peak reverse voltage VRM 250 V Forward current IF 400 mA Surge forward current (t ≤ 10ms) IFSM 1 Total power dissipation, T S = 28 °C Ptot 400 mW Junction temperature Tj 80 °C Storage temperature Tstg A - 55 ...+150 Maximum Ratings Junction - ambient 1) Junction - soldering point RthJA ≤ 465 RthJS ≤ 305 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 240A Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 240 - - DC characteristics Breakdown voltage V(BR) V I (BR) = 500 µA Reverse current µA IR VR = 200 V - 5 - VR = 240 - - 50 Forward voltage V VF I F = 10 mA - 0.325 - I F = 20 mA - 0.37 - I F = 50 mA - 0.47 - - 11.5 - AC characteristics Diode capacitance CT pF VR = 10 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 240A Forward current IF = f (TA*;TS) * Package mounted on epoxy 500 mA 400 IF 350 TS 300 250 TA 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f(t p) IFmax / IFDC = f(tp) 10 3 10 3 K/W IFmax / IFDC - RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 1 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Sep-09-1998 1998-11-01