2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation D D D D D APPLICATIONS Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet. TO-206AF (TO-72) TO-236 (SOT-23) S C 1 4 D 1 3 S 2 G 2 3 D G Top View 2N4416 2N4416A Top View SST4416 (H1)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70242 S-50147—Rev. H, 24-Jan-05 www.vishay.com 1 2N4416/2N4416A/SST4416 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . −30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . −35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . −65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . −65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150 _C (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW Power Dissipation : Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TA = 25_C UNLESS NOTED) Limits 2N4416 Parameter 2N4416A SST4416 Symbol Test Conditions Typa Min V(BR)GSS IG = −1 mA , VDS = 0 V −36 −30 VGS(off) VDS = 15 V, ID = 1 nA −3 VDS = 15 V, VGS = 0 V 10 VGS = −20 V, VDS = 0 V (2N) −2 −100 −100 −4 −100 −100 Max Min −6 −2.5 15 5 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current IDSS IGSS TA = 150_C VGS = −15 V, VDS = 0 V (SST) TA = 125_C Gate Operating Current 5 −35 −30 −6 V −6 15 5 15 mA pA −0.002 −1 nA −0.6 IG VDG = 10 V, ID = 1 mA −20 ID(off) VDS = 10 V, VGS = −6 V 2 Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 300 mA 150 W Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Drain Cutoff Currentc pA Dynamic Common-Source Forward Transconductanceb gfs Common-Source Output Conductanceb gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec www.vishay.com 2 en VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 6 4.5 7.5 4.5 7.5 15 50 50 2.2 4 4 0.7 0.8 0.8 1 2 2 6 4.5 7.5 mS 50 mS pF nV⁄ √Hz Document Number: 70242 S-50147—Rev. H, 24-Jan-05 2N4416/2N4416A/SST4416 Vishay Siliconix HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED) Limits 100 MHz Parameter Symbol Min Test Conditions 400 MHz Max Min Max Unit Common Source Input Conductanced giss 100 1,000 Common Source Input Susceptanced biss 2,500 10,000 Common Source Output Conductanced goss Common Source Output Susceptanced boss Common Source Forward Transconductanced gfs Common-Source Power Gaind Gps Noise Figured NF VDS = 15 V, VGS = 0 V 75 100 1,000 4,000 mS m 4,000 VDS = 15 V, ID = 5 mA 18 10 2 RG = 1 kW dB 4 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test. NH TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 6 gfs 12 4 8 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 4 0 2 rDS(on) − Drain-Source On-Resistance ( Ω ) 8 0 0 −2 −4 −6 −8 VGS(off) − Gate-Source Cutoff Voltage (V) rDS @ ID = 300 mA, VGS = 0 V 60 gos 200 40 100 20 0 0 −2 −4 −6 −8 VGS(off) − Gate-Source Cutoff Voltage (V) Output Characteristics −10 Output Characteristics 10 15 VGS(off) = −2 V VGS(off) = −3 V 8 12 VGS = 0 V ID − Drain Current (mA) ID − Drain Current (mA) 80 rDS 300 0 −10 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 400 gos − Output conductance (µS) IDSS 100 500 gfs − Forward Transconductance (mS) IDSS − Saturation Drain Current (mA) 20 16 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage −0.2 V 6 −0.4 V 4 −0.6 V −0.8 V −1.0 V −1.2 V 2 VGS = 0 V −0.3 V 9 −0.6 V −0.9 V 6 −1.2 V −1.5 V 3 −1.8 V 0 0 −1.4 V 2 4 6 8 VDS − Drain-Source Voltage (V) Document Number: 70242 S-50147—Rev. H, 24-Jan-05 10 0 0 2 4 6 8 VDS − Drain-Source Voltage (V) 10 www.vishay.com 3 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 5 Output Characteristics 5 VGS(off) = −2 V VGS = 0 V 4 −0.2 V ID − Drain Current (mA) ID − Drain Current (mA) 4 −0.4 V 3 −0.6 V −0.8 V 2 −1.0 V 1 VGS = 0 V VGS(off) = −3 V −0.3 V −0.6 V 3 −1.2 V −0.9 V −1.5 V 2 −1.8 V 1 −1.2 V −2.1 V −1.4 V 0 0 0 0.2 0.4 0.6 0.8 0 1.0 0.2 VDS − Drain-Source Voltage (V) VDS = 10 V VGS(off) = −3 V 8 1.0 VDS = 10 V 8 TA = −55_C ID − Drain Current (mA) ID − Drain Current (mA) 0.8 10 VGS(off) = −2 V 25_C 6 125_C 4 2 TA = −55_C 25_C 6 4 125_C 2 0 0 0 −0.4 −0.8 −1.2 −1.6 0 −2 −0.6 −1.2 −1.8 −2.4 −3 VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltgage 10 10 VGS(off) = −2 V VGS(off) = −3 V VDS = 10 V f = 1 kHz 8 gfs − Forward Transconductance (mS) gfs − Forward Transconductance (mS) 0.6 Transfer Characteristics Transfer Characteristics 10 TA = −55_C 6 25_C 4 125_C 2 0 VDS = 10 V f = 1 kHz 8 TA = −55_C 6 25_C 4 125_C 2 0 0 −0.4 −0.8 −1.2 −1.6 VGS − Gate-Source Voltage (V) www.vishay.com 4 0.4 VDS − Drain-Source Voltage (V) −2 0 −0.6 −1.2 −1.8 −2.4 −3 VGS − Gate-Source Voltage (V) Document Number: 70242 S-50147—Rev. H, 24-Jan-05 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 100 g fs R L AV + 1 ) R g L os TA = 25_C 240 80 VGS(off) = −2 V AV − Voltage Gain rDS(on) − Drain-Source On-Resistance ( Ω ) 300 180 −3 V 120 60 Assume VDD = 15 V, VDS = 5 V RL + 60 40 VGS(off) = −2 V 20 −3 V 0 0.1 ID − Drain Current (mA) 1 0 10 ID − Drain Current (mA) 1 0.1 Common-Source Input Capacitance vs. Gate-Source Voltage 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3 5 Crss − Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss − Input Capacitance (pF) 10 V ID 3 VDS = 0 V 2 10 V 1 0 0 100 −4 −8 −12 −16 VGS − Gate-Source Voltage (V) f = 1 MHz 2.4 1.8 VDS = 0 V 1.2 10 V 0.6 0 0 −20 Input Admittance 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source −4 −8 −12 −16 VGS − Gate-Source Voltage (V) −20 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 10 gfs (mS) (mS) gis 1 0.1 100 −bfs 1 200 500 f − Frequency (MHz) Document Number: 70242 S-50147—Rev. H, 24-Jan-05 1000 0.1 100 200 500 1000 f − Frequency (MHz) www.vishay.com 5 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance Output Admittance 10 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source bos −brs 1 gos (mS) (mS) 1 −grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 1000 200 500 f − Frequency (MHz) Gate Leakage Current 100 nA VGS(off) = −3 V gfs − Forward Transconductance (mS) 1 mA 0.1 mA TA = 125_C 1 nA IGSS @ 125_C 100 pA 5 mA 10 pA 1 mA 0.1 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 8 TA = −55_C 6 25_C 4 125_C 2 4 8 12 16 VDG − Drain-Gate Voltage (V) 0.1 20 Equivalent Input Noise Voltage vs. Frequency VGS(off) = −3 V gos − Output Conductance (µS) Hz 16 12 8 ID = 5 mA 4 1 ID − Drain Current (mA) 10 Output Conductance vs. Drain Current 20 VDS = 10 V en − Noise Voltage nV / VDS = 10 V f = 1 kHz 0 0 20 1000 200 500 f − Frequency (MHz) Common-Source Forward Transconductance vs. Drain Current 10 IG @ ID = 5 mA 10 nA IG − Gate Leakage 100 VDS = 10 V f = 1 kHz 16 TA = −55_C 12 25_C 8 125_C 4 VGS = 0 V 0 0 10 100 1k f − Frequency (Hz) 10 k 100 k 0.1 1 ID − Drain Current (mA) 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70242. www.vishay.com 6 Document Number: 70242 S-50147—Rev. H, 24-Jan-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1